Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
675	Request Pricing	-

MPSH81RLRE

Manufacturer

Onsemi
Manufacturer's Part Number

MPSH81RLRE
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; JEDEC-95 Code: TO-92; No. of Terminals: 3;
Datasheet

Datasheet

675 In Stock

Popular Products

SMBJ18CA

KYOCERA AVX

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148W-T

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FT232RL-TUBE

FTDI

FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.

Details

BAV99

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;

Details

SS14

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Terry Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

SMBJ18CA

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358M

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

BAT54C-7-F

Diodes Incorporated

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

Details

1N4148

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

USB2514BI-AEZG

Microchip Technology

USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.

Details

1N4148WS

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

1N4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

L78L05ABZ-AP

STMicroelectronics

L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.

Details

MC33269T-3.3G

Onsemi

MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

Details

MPSH81RLRE Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	PNP
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.85 pF

Category Top Products

BFR92A

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

KSC1730R

Onsemi

The Onsemi KSC1730R is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 40, operates at up to 150 °C, and features a max fT of 1100MHz.

KSC2223O

Onsemi

KSC2223O by Onsemi is an NPN BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the very high frequency band. It has a min hFE of 60, operates b/w -55 to 150 °C, and can handle a max IC of 0.02A in a small outline package style.

BFR193FH6327XTSA1

Infineon Technologies

BFR193FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, max collector current of 0.08A, and transition frequency of 8000MHz. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.

MMBTH24

Onsemi

MMBTH24 by Onsemi is a NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 400MHz. It's used in amplifier applications, operates at -55 to 150 °C, and has a max power dissipation of 0.225W.

BFP520H6327XTSA1

Infineon Technologies

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.

S822T

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Application: AMPLIFIER;

MMPQ2369

Onsemi

The Onsemi MMPQ2369 is a NPN RF BJT with 4 elements, ideal for amplifier applications. It has a hFE of 40, fT of 550 MHz, and can handle up to 0.5A collector current. With a max operating temperature of 150 °C and peak reflow temp of 235°C, it's suitable for high-frequency circuits in small outline packages.

934066878225

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 53000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A;

MPSH17RLRE

Onsemi

MPSH17RLRE by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a low collector-base capacitance of 0.9pF.

934067697235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

CA3146E

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;

2N2369A

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;

NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.

BFU530AR

NXP Semiconductors

The NXP Semiconductors BFU530AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max collector-emitter voltage of 12V, collector current of 0.04A, and transition frequency of 11GHz. This surface-mount device comes in a small outline package with Gull Wing terminals.

BFU520XR,235

NXP Semiconductors

NXP Semiconductors' BFU520XR,235 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with a max fT of 10500 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.45 W and can handle up to 16 V collector-emitter voltage.

HFA3127BZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JEDEC-95 Code: MS-012AC;

BFR92ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

SS9018HBU

Onsemi

SS9018HBU by Onsemi is a NPN RF Small Signal Bipolar Junction Transistor (BJT) with a max operating temperature of 150 °C. It has a min DC current gain (hFE) of 97 and a nominal transition frequency (fT) of 1100 MHz. This transistor is commonly used in amplifier applications.