Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQR-SD3I-8G1K6SNLB

Manufacturer

Advantech
Manufacturer's Part Number

SQR-SD3I-8G1K6SNLB
Description

DDR3L DRAM MODULE; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1; Organization: 8GX1;
Datasheet

Datasheet

Not In Stock

Popular Products

MBRS360T3G

Onsemi

MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

Details

M39029/58-360

Glenair

CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;

Details

1N4148WS

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NE555D

NXP Semiconductors

SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Baneasa S A

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

E8WSDC12-32.768KTR

Abracon

Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.

Details

2N7002

Samsung

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

Details

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

LM2931AZ-5.0RPG

Onsemi

LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.

Details

LM2931Z-5.0G

Onsemi

LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.

Details

LL4148-GS08

Vishay Intertechnology

The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.

Details

2N7002

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;

Details

E8WSDC12-32.768KTR

Ecliptek

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

Details

BAV99

Gec Plessey Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

General Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SQR-SD3I-8G1K6SNLB Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
No. of Ports:	1
Memory Density:	8589934592 bit
Organization:	8GX1
Surface Mount:	NO
Memory IC Type:	DDR3L DRAM MODULE
Minimum Operating Temperature:	-40 Cel
Memory Width:	1
No. of Functions:	1
No. of Terminals:	204
No. of Words:	8589934592 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
No. of Words Code:	8G
JESD-30 Code:	R-XDMA-N204
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Nominal Supply Voltage / Vsup (V):	1.35
Maximum Operating Temperature:	85 Cel
Package Code:	DIMM

Category Top Products

MT41J256M16HA-125:ETR

Micron Technology

Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.

MT47H64M16HR-25EIT:H

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:H is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

M393A2K43CB2-CVF

Samsung

Samsung's M393A2K43CB2-CVF DDR4 DRAM module features 16GX8 organization, 1.2V supply voltage, and 137.4Gb memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst capability in a compact MICROELECTRONIC ASSEMBLY package.

MT53E1G32D2FW-046WT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046WT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.

MT48LC8M16A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh mode, common I/O type, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory access in compact form factors.

S70KS1282GABHB030

Infineon Technologies

S70KS1282GABHB030 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. It is designed for applications requiring high-speed synchronous memory, such as automotive electronics and industrial control systems.

K4S561632N-LI75

Samsung

Samsung's K4S561632N-LI75 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.

M471B5173QH0-YK0

Samsung

Samsung M471B5173QH0-YK0 DDR DRAM Module features 512MX64 organization, 1.35V nominal voltage, and 512M words code. Ideal for applications requiring high memory density and single bank page burst access mode in microelectronic assemblies.

D2516ECMDXGJDI-U

Kingston Technology Company

Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.

S27KL0642DPBHB023

Infineon Technologies

Infineon's S27KL0642DPBHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data processing and storage in automotive electronics, IoT devices, and industrial control systems.

AS4C8M16SA-7TCNTR

Alliance Memory

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

AS4C512M16D3LA-10BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.

IS42S81600F-7TLI-TR

Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.

MT46H64M32LFBQ-48IT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.

MT46V32M16P-5B:JTR

Micron Technology

Micron Technology's MT46V32M16P-5B:JTR is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 536870912 bits. Ideal for applications requiring fast access times and high memory capacity in commercial temperature environments.