Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NT6DM32M16BD-T1

Manufacturer

Nanya Technology
Manufacturer's Part Number

NT6DM32M16BD-T1
Description

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;
Datasheet

Datasheet

Not In Stock

Popular Products

SS495ASP

Micro Switch

The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.

Details

1N4148WT

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CGA3E2X7R1H104K080AA

TDK

CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.

Details

LM358N

Harris Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Mde Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

STM32H750VBT6

STMicroelectronics

STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.

Details

DS18B20U+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;

Details

2N7002

Rectron

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

Details

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

Details

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Details

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

Details

2N7002

Kec

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

LM317T

Tt Electronics Plc

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;

Details

1N4148

Nexperia

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Microsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20Z+

Analog Devices

DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.

Details

BAV99

Philips Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NT6DM32M16BD-T1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	32MX16
Maximum Seated Height:	1 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
No. of Terminals:	60
No. of Words:	33554432 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B60
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	8 mm
No. of Ports:	1
Memory Density:	536870912 bit
Self Refresh:	YES
Memory IC Type:	DDR1 DRAM
Minimum Operating Temperature:	-25 Cel
Memory Width:	16
No. of Functions:	1
Length:	9 mm
Maximum Access Time:	5 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.95 V

Category Top Products

IS42S16100H-7TLI-TR

Integrated Silicon Solution

IS42S16100H-7TLI-TR by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data access with a max operating temperature of 85°C.

M368L3223FTN-CCC

Samsung

Samsung's M368L3223FTN-CCC DDR DRAM MODULE features 32MX64 organization, 2147483648 bit memory density, and 200 MHz max clock frequency. Ideal for applications requiring high-speed data processing and large memory capacity in commercial temperature environments.

IS42S16400J-6TL

Integrated Silicon Solution

IS42S16400J-6TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for commercial applications requiring fast memory access and high data density in a compact form factor.

M378B5273DH0-CH9

Samsung

Samsung M378B5273DH0-CH9 DDR DRAM Module operates at 667MHz with 512MX64 organization. It features 512M words code, 34359738368 bit memory density, and dual bank page burst access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

S70KS1282GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;

MT48LC4M32B2B5-6AAAT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.

MT41K256M16HA-125IT:ETR

Micron Technology

Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MTA9ASF1G72HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

IS43TR16128C-15HBL

Integrated Silicon Solution

IS43TR16128C-15HBL by Integrated Silicon Solution is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in electronic devices.

S70KS1282GABHB033

Infineon Technologies

Infineon's S70KS1282GABHB033 is a 16MX8 DRAM with 1.8V supply, operating at up to 200MHz clock frequency. Suitable for automotive applications (AEC-Q100), it features synchronous operation, self-refresh capability, and a compact grid array package style.

S70KS1282GABHV020

Infineon Technologies

Infineon's S70KS1282GABHV020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 105°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its low profile grid array package and common I/O type.

MT40A1G8SA-062E:ETR

Micron Technology

Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.

K4H560838H-UCB3

Samsung

Samsung's K4H560838H-UCB3 DDR1 DRAM features 32MX8 organization, operates at 166 MHz clock frequency, and has a memory density of 268MB. Ideal for commercial applications requiring high-speed data processing with a max operating temperature of 70°C.

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MT40A1G8WE-075EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.

IS42S16400J-7BLI-TR

Integrated Silicon Solution

IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.

MT48LC8M16A2P-7EIT

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT is a 8MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

S70KS1282GABHB033

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit; Maximum Standby Current: .0005 Amp;