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MT53E512M32D1ZW-046AAT:B
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ManufacturerMicron Technology
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Manufacturer's Part NumberMT53E512M32D1ZW-046AAT:B
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DescriptionLPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Operating Temperature: 105 Cel;
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Datasheet
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DetailsMT53E512M32D1ZW-046AAT:B Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 512MX32 |
| Maximum Seated Height: | 1.05 mm |
| Access Mode: | MULTI BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.06 V |
| Surface Mount: | YES |
| No. of Terminals: | 200 |
| Maximum Clock Frequency (fCLK): | 2133 MHz |
| No. of Words: | 536870912 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Screening Level: | AEC-Q100 |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B200 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 105 Cel |
| Package Code: | TFBGA |
| Width: | 10 mm |
| Other Names: | 557-MT53E512M32D1ZW-046AAT:B |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 17179869184 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 16,32 |
| Memory IC Type: | LPDDR4 DRAM |
| Minimum Operating Temperature: | -40 Cel |
| Memory Width: | 32 |
| No. of Functions: | 1 |
| Package Equivalence Code: | BGA200,12X20,32/25 |
| Interleaved Burst Length: | 16,32 |
| Length: | 14.5 mm |
| No. of Words Code: | 512M |
| Nominal Supply Voltage / Vsup (V): | 1.1 |
| Additional Features: | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX |
| Terminal Pitch: | .8 mm |
| Maximum Supply Voltage (Vsup): | 1.17 V |