Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,933	Request Pricing	-

BFS17W

Manufacturer

Vishay Telefunken
Manufacturer's Part Number

BFS17W
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
Datasheet

Datasheet

4933 In Stock

Popular Products

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

Details

LM555CN

Rochester Electronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;

Details

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

Details

BSS138

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;

Details

1N4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/56351

Souriau-sunbank Connection Technologies

Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.

Details

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317LMX/NOPB

Texas Instruments

LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.

Details

MBRA160T3G

Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

Details

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

2N7002

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

SS14

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Harris Semiconductor

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148WS

First Components International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Weitron Technology

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

LD1117S33TR

STMicroelectronics

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

Details

BFS17W Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2400 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND

Category Top Products

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;

2N2222A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MPSH10

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

BF224RLRM

Onsemi

BF224RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and max operating temp of 150 °C. It operates in the very high frequency band at 850MHz, making it ideal for applications requiring high-speed signal amplification in electronic circuits.

2SC5227A-4-TB-E

Onsemi

Onsemi's 2SC5227A-4-TB-E is an NPN RF BJT with a max power dissipation of 0.2W and fT of 7000MHz. Ideal for small outline packages, it operates up to 150 °C, with IC at 0.07A making it suitable for high-frequency applications like RF amplifiers.

934067698215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

BFR520

NXP Semiconductors

The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.

NE85634-T1-A

Renesas Electronics

NE85634-T1-A by Renesas Electronics is a NPN RF BJT transistor with max fT of 6500 MHz. It operates at 150°C, has Vce(max) of 12V, and Ic(max) of 0.1A. Ideal for L Band applications like amplifiers due to its small outline package and flat terminal form.

2SC5245A-4-TL-E

Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.

MPSH81RLRE

Onsemi

MPSH81RLRE by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It operates at a max temp of 150 °C, has a max Vce of 20V, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.

50A02CH-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;

MPSH11RLRE

Onsemi

MPSH11RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high operating temperature (150 °C). The transistor's through-hole package makes it suitable for various cylindrical-shaped devices.

NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.

MPSH81

Onsemi

The Onsemi MPSH81 is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low capacitance of 0.85pF. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.

BSX28

STMicroelectronics

BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

BFP405FH6327XTSA1

Infineon Technologies

BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.

CA3086M96

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;

2N918

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;