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BFT25A,215

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFT25A,215
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .032 W; Maximum Collector Current (IC): .0065 A;
Datasheet

Datasheet

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BFT25A,215 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	5000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.0065 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.032 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	175 Cel
Maximum Power Dissipation Ambient:	.032 W
Moisture Sensitivity Level (MSL):	1
Other Names:	BFT25A T/R 568-1992-1 568-1992-2 BFT25A215 934008580215 568-1992-6 954-BFT25A215
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	5 V
Additional Features:	HIGH RELIABILITY
Maximum Collector-Base Capacitance:	.45 pF
Reference Standard:	CECC
Peak Reflow Temperature (C):	260

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