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BFT25A,215

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFT25A,215
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .032 W; Maximum Collector Current (IC): .0065 A;
Datasheet

Datasheet

4383 In Stock

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BSS138

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1N4148

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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LP2950CDT-3.3G

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BAV99

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2N2222A

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2N2222A

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1N4148

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RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;

Details

BFT25A,215 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	5000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.0065 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.032 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	175 Cel
Maximum Power Dissipation Ambient:	.032 W
Moisture Sensitivity Level (MSL):	1
Other Names:	BFT25A T/R 568-1992-1 568-1992-2 BFT25A215 934008580215 568-1992-6 954-BFT25A215
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	5 V
Additional Features:	HIGH RELIABILITY
Maximum Collector-Base Capacitance:	.45 pF
Reference Standard:	CECC
Peak Reflow Temperature (C):	260

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BFG425W,115

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BFR93AR

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MSC2295-BT1

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The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.

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Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.

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TIS128 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 6.5MHz. With a max operating temp of 175°C and VCE of 45V, it's suitable for high-frequency circuit designs.

MPSH17G

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BFR92A

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HFA3127B

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MPSH10RLRA

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BFT92W

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MPSH11ZL1

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2SC5245A-4-TL-E

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BFY90

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BFP520H6327XTSA1

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BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.

Bulk

BFT25A,215

4383 In Stock

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BFT25A,215 Technical Details

Category Top Products

CA3083Z

15GN01MA-TL-E

BFG425W,115

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