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BFG425W,115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFG425W,115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;
Datasheet

Datasheet

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BFG425W,115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	25000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.03 A
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.135 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	EMITTER
Maximum Power Dissipation Ambient:	.135 W
Moisture Sensitivity Level (MSL):	1
Other Names:	BFG425W115 568-1644-1 568-1644-6 954-BFG425W115 934047470115 568-1644-2 BFG425W T/R
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	4.5 V
Peak Reflow Temperature (C):	260

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