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2N918

Manufacturer

Texas Instruments
Manufacturer's Part Number

2N918
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; JESD-30 Code: O-MBCY-W4;
Datasheet

Datasheet

9690 In Stock

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2N2222A

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MBR1560CT

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RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;

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SS14

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RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

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2N918 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	3 pF
Peak Reflow Temperature (C):	NOT SPECIFIED

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LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.

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BFP640H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 40 GHz, IC of 0.05 A, and VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and silicon germanium material.

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NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.

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