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SI4447ADY-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI4447ADY-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.2 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
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Datasheet
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DetailsSI4447ADY-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 7.2 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 4.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .045 ohm |
| JEDEC-95 Code: | MS-012AA |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Maximum Drain Current (Abs) (ID): | 7.2 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
