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K4H641638Q-LCCC

Manufacturer

Samsung
Manufacturer's Part Number

K4H641638Q-LCCC
Description

CACHE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4H641638Q-LCCC Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.003 Amp
Organization:	4MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	90 mA
Terminal Finish:	MATTE TIN
No. of Terminals:	66
Maximum Clock Frequency (fCLK):	400 MHz
No. of Words:	4194304 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	CMOS
JESD-30 Code:	R-PDSO-G66
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
Package Code:	TSSOP
Moisture Sensitivity Level (MSL):	1
Input/Output Type:	COMMON
Memory Density:	67108864 bit
Sequential Burst Length:	2,4,8
Memory IC Type:	CACHE DRAM MODULE
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP66,.46
Refresh Cycles:	4096
Interleaved Burst Length:	2,4,8
Maximum Access Time:	.65 ns
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	2.5
Peak Reflow Temperature (C):	260
Terminal Pitch:	.635 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	2.5

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