MT40A256M16LY-075:F by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,938	Request Pricing	-

MT40A256M16LY-075:F

Manufacturer

Micron Technology
Manufacturer's Part Number

MT40A256M16LY-075:F
Description

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;
Datasheet

Datasheet

1938 In Stock

Popular Products

M39029/58-360

Carlisle Interconnect Technologies

GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

M24308/2-1F

Souriau

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;

Details

LM358AN

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138PS,115

NXP Semiconductors

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

Details

ABS25-32.768KHZ-T

Abracon

Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.

Details

LM317T

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Adjustability: ADJUSTABLE; Package Equivalence Code: SIP3,.1TB;

Details

1N4148WS

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM2931AZ-5.0G

Onsemi

LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.

Details

2N7002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

Details

2N7002

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

Details

1N4148WS

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Onsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MT40A256M16LY-075:F Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX16
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	TFBGA
Width:	7.5 mm
Other Names:	557-MT40A256M16LY-075:F
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Memory IC Type:	DDR4 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Length:	13.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.2
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.26 V

Category Top Products

MT53D1024M32D4DT-053WT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-053WT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 1869.1 MHz clock frequency. It features dual bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.

S27KL0642DPBHI030

Infineon Technologies

Infineon's S27KL0642DPBHI030 is a 8MX8 DRAM with 67108864 bit memory density. It operates at 166 MHz clock frequency and has a very thin profile grid array package style. Ideal for applications requiring fast synchronous memory access in compact spaces.

MT41K512M16HA-107:A

Micron Technology

Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

SQR-SD3I-8G1K6SNLB

Advantech

Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.

IS42S16160J-7BLI

Integrated Silicon Solution

IS42S16160J-7BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16M words code. It operates at 3.3V, has a memory density of 268435456 bits, and offers a max access time of 7ns. Ideal for industrial applications requiring high-speed memory solutions in compact form factors.

NT6DM32M16BD-T1I

Nanya Technology

NT6DM32M16BD-T1I by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a very thin profile grid array package style.

MT40A1G8SA-062E:E

Micron Technology

Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MT41K256M16TW-093:P

Micron Technology

MT41K256M16TW-093:P by Micron Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a nominal voltage of 1.35V and has a max operating temperature of 95°C. This memory module is commonly used in applications requiring high-speed synchronous operation, such as servers and data centers.

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.

MT48LC32M16A2TG-75IT:C

Micron Technology

Micron Technology's MT48LC32M16A2TG-75IT:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package.

K4T1G164QF-BIE6

Samsung

Samsung's K4T1G164QF-BIE6 DDR2 DRAM features 64MX16 organization, 333 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast data processing and storage with a low standby current of 0.01 Amp.

MT47H64M16HR-3:G

Micron Technology

Micron Technology's MT47H64M16HR-3:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and networking equipment.

KM44C1000BT-7

Samsung

Samsung's KM44C1000BT-7 is a 1MX4 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and fast page access mode, suitable for commercial applications requiring high memory density and low standby current. The package is small outline with dual terminal position, making it ideal for space-constrained designs.

MT46H64M32LFBQ-48AIT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48AIT:C is a 64MX32 LPDDR1 DRAM with 67108864 words. It operates at 208 MHz, has a memory width of 32 bits, and supports a max clock frequency of 208 MHz. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

KM44C256BP-7

Samsung

Samsung's KM44C256BP-7 is a 256Kx4 DRAM with 262144 words and memory density of 1048576 bits. Operating at 5V, it has a max access time of 70ns and refresh cycles of 512. Ideal for applications requiring fast page access in commercial temperature grades.

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.

MB814400A-70PZ

Fujitsu Semiconductor America

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;

S27KL0642GABHB020

Infineon Technologies

Infineon's S27KL0642GABHB020 DRAM offers 8MX8 organization, operates synchronously at up to 200 MHz, and features a self-refresh mode. Ideal for applications requiring high-speed memory access in automotive electronics, with AEC-Q100 screening level ensuring reliability in harsh environments.

MT41K512M8DA-107IT:P

Micron Technology

MT41K512M8DA-107IT:P by Micron Technology is a DDR3L DRAM with 512Mx8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast access times in a compact form factor.

NT5CC128M16JR-EK

Nanya Technology

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.