Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

KVR16LN11/8

Manufacturer

Kingston Technology Company
Manufacturer's Part Number

KVR16LN11/8
Description

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;
Datasheet

Datasheet

Not In Stock

Popular Products

RC0402FR-071KL

Yageo

The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.

Details

LM107H

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

LL4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148

Semitronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Rectron

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

STMicroelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

261

Micronetics

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

Details

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

Details

1N4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

OHN3140U

Tt Electronics Plc

OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.

Details

2N2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

Details

E8WSDC12-32.768KTR

Ecliptek

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

Details

LM2675M-ADJ/NOPB

National Semiconductor

SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148

Surge Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Promax-johnton

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

Details

1N4148WS

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

KVR16LN11/8 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	1GX64
Maximum Seated Height:	30 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.28 V
Surface Mount:	NO
No. of Terminals:	240
No. of Words:	1073741824 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XDMA-N240
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	DIMM
No. of Ports:	1
Memory Density:	68719476736 bit
Memory IC Type:	DDR DRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	64
No. of Functions:	1
Length:	133.35 mm
No. of Words Code:	1G
Nominal Supply Voltage / Vsup (V):	1.35
Additional Features:	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.45 V

Category Top Products

IS42S32800J-7BL

Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 143 MHz clock frequency. Featuring a 268MB memory density, it operates at 3.3V and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data processing in commercial temperature environments.

IS42S32160D-7BLI-TR

Integrated Silicon Solution

IS42S32160D-7BLI-TR by Integrated Silicon Solution is a 16MX32 DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

MT41K64M16TW-107:J

Micron Technology

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.

IS43LR16800G-6BLI-TR

Integrated Silicon Solution

IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.

MT46V64M4P-5B:K

Micron Technology

Micron Technology's MT46V64M4P-5B:K is a DDR1 DRAM with 64MX4 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in commercial temperature environments.

MT48LC16M16A2BG-75:D

Micron Technology

Micron Technology's MT48LC16M16A2BG-75:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. It features a very thin profile grid array package suitable for commercial applications requiring fast access time of 5.4ns and supports common I/O type with self-refresh capability.

MT41K512M16VRN-107IT:P

Micron Technology

MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.

MT48LC8M16A2TG-8E

Micron Technology

Micron Technology's MT48LC8M16A2TG-8E is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 125 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory performance in a compact thin profile package.

M471A1K43CB1-CRC

Samsung

Samsung's M471A1K43CB1-CRC DDR DRAM Module features 1GX64 organization, 64-bit memory width, and 68719476736-bit memory density. Ideal for applications requiring synchronous operation, it has a nominal voltage of 1.2V and operates in a temperature range of 0-85°C.

MT53D512M16D1DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M16D1DS-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MT53E2G32D4DT-046AAT:A

Micron Technology

LPDDR4 DRAM;

IS43TR16128C-15HBL

Integrated Silicon Solution

IS43TR16128C-15HBL by Integrated Silicon Solution is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in electronic devices.

IS42S32400F-7BLI

Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.

IS42S32400F-6TLI-TR

Integrated Silicon Solution

IS42S32400F-6TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, operating at 166 MHz. It features a small outline package and is ideal for industrial applications requiring high memory density and fast access times.

AS4C16M16SA-6TIN

Alliance Memory

AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.

MT48LC8M16A2P-6AAAT:LTR

Micron Technology

SYNCHRONOUS DRAM; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;

MT8D432M-6X

Micron Technology

MT8D432M-6X by Micron Technology is a 4MX32 EDO DRAM MODULE with 32 memory width and 134217728 bit memory density. It operates at 5V, has a max access time of 60ns, and uses FAST PAGE WITH EDO access mode. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.

S27KL0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;

MT41J128M16JT-125:K

Micron Technology

Micron Technology's MT41J128M16JT-125:K is a DDR3 DRAM with 128MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.

MT48LC4M32B2P-6A:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6A:L is a 4MX32 DRAM with 3.3V supply, operating in synchronous mode with self-refresh capability. It features a memory density of 134217728 bits and offers fast access time of 5.4 ns. Ideal for commercial applications requiring high-speed data processing in compact devices.