Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IS42S32400F-6BLI

Manufacturer

Integrated Silicon Solution
Manufacturer's Part Number

IS42S32400F-6BLI
Description

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Semtech Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

ERJ3EKF1002V

Panasonic

Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.

Details

FDC5614P

TAIZHOU ELECTRONICS CO LTD

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

Details

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

Details

LL4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

STM32F103C8T6

STMicroelectronics

STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.

Details

M39029/56-351

TE Connectivity

TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.

Details

SSL-LXA228SRC-TR11

Lumex

SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.

Details

4554

Jw Miller Magnetics

Other Semiconductors;

Details

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

Details

LM358N

Intersil

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

Details

1N4148WS

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Micronas Semiconductor Holding Ag

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

Details

BSS138BKW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

Details

SS14

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358DT

STMicroelectronics

LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.

Details

2N7002

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

Details

SMBJ18CA

First Components International

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

IS42S32400F-6BLI Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.002 Amp
Organization:	4MX32
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	180 mA
No. of Terminals:	90
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	4194304 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B90
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	TFBGA
Width:	8 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	134217728 bit
Self Refresh:	YES
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	32
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA90,9X15,32
Refresh Cycles:	4096
Interleaved Burst Length:	1,2,4,8
Length:	13 mm
Maximum Access Time:	5.4 ns
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3

Category Top Products

AS4C512M16D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M16D4-75BCN is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

M393B1K70DH0-CK0

Samsung

Samsung's M393B1K70DH0-CK0 is a 1GX72 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.5V, it offers 1073741824 words memory capacity and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

IS43TR16128DL-107MBL

Integrated Silicon Solution

IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.

W631GU6NB-12

Winbond Electronics

W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

S27KS0642GABHV023

Infineon Technologies

S27KS0642GABHV023 by Infineon Technologies is a 8MX8 DRAM with 67108864 bit memory density. It operates at 200 MHz clock frequency, featuring synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile package style.

MT48LC4M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75IT:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temp grade, and Gull Wing terminal form. Ideal for applications requiring fast access time and high memory density.

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.

MT40A1G8SA-062EIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EIT:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for industrial applications with a temperature range of -40 to 95°C, it offers high memory density of 8589934592 bits and supports multi-bank page burst access mode.

S27KL0642DPBHI020

Infineon Technologies

S27KL0642DPBHI020 by Infineon Technologies is an 8MX8 DRAM with a memory density of 67108864 bit. Operating at up to 200 MHz, it features synchronous mode and self-refresh capability. This HYPERRAM is suitable for applications requiring high-speed data storage in compact electronic devices.

MT53D1024M32D4DT-053AIT:D

Micron Technology

LPDDR4 DRAM;

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.

KVR16S11/8

Kingston Technology Company

Kingston KVR16S11/8 is a DDR3 DRAM module with 1Gx64 organization, operating at 800MHz. It has a memory density of 68719476736 bits and operates at a voltage range of 1.425V to 1.575V. Ideal for applications requiring synchronous operation and common I/O type in microelectronic assemblies.

MT48LC4M16A2P-6AIT:JTR

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.

MT52L256M32D1PF-107WT:B

Micron Technology

Micron Technology's MT52L256M32D1PF-107WT:B is a LPDDR3 DRAM with 256MX32 organization, 933 MHz clock frequency, and 1.2V nominal voltage. It is suitable for applications requiring high-speed memory access in mobile devices due to its low profile package and common I/O type.

K4B1G1646G-BCNB

Samsung

Samsung's K4B1G1646G-BCNB is a 64MX16 DDR3 DRAM with 1073741824 bit memory density. It operates at a max clock frequency of 1066 MHz and has a peak reflow temperature of 260°C. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.

K4A4G165WE-BIWE

Samsung

Samsung's K4A4G165WE-BIWE DDR4 DRAM features 256MX16 organization, 1.2V supply voltage, and 95°C max operating temp. Ideal for industrial applications requiring high memory density and wide memory width.

K4S561632J-UC75T

Samsung

Samsung's K4S561632J-UC75T is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for applications requiring high-speed memory performance in compact electronic devices.

D2164A-20

Intel

Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.