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AS4C256M16D3LC-12BANTR

Manufacturer

Alliance Memory
Manufacturer's Part Number

AS4C256M16D3LC-12BANTR
Description

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Sequential Burst Length: 4,8;
Datasheet

Datasheet

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AS4C256M16D3LC-12BANTR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0096 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Surface Mount:	YES
Maximum Supply Current:	228 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	800 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	TFBGA
Width:	7.5 mm
Moisture Sensitivity Level (MSL):	3
Other Names:	1450-AS4C256M16D3LC-12BANTR
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory IC Type:	DDR3L DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	13.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.35
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.45 V

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