S70KL1282DPBHA023 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4	Request Pricing	-

S70KL1282DPBHA023

Manufacturer

Infineon Technologies
Manufacturer's Part Number

S70KL1282DPBHA023
Description

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; Maximum Supply Voltage (Vsup): 3.6 V;
Datasheet

Datasheet

4 In Stock

Popular Products

SS14

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

Details

1554216004

Molex

WIRE AND CABLE;

Details

1N4148WS

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

1N4148

Sun Wai Electronic

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148WS

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

General Instrument

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hy Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

1N4148

Hitachi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

RC0603FR-071KL

Yageo

Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.

Details

FT232RL-TUBE

FTDI

FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.

Details

CGA3E2X7R1H104K080AA

TDK

CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.

Details

1N4148

Renesas Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;

Details

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

Details

1N4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Electronic Devices

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

S70KL1282DPBHA023 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.0005 Amp
Organization:	16MX8
Output Characteristics:	3-STATE
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	2.7 V
Surface Mount:	YES
Maximum Supply Current:	60 mA
No. of Terminals:	24
Maximum Clock Frequency (fCLK):	200 MHz
No. of Words:	16777216 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B24
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VBGA
Width:	6 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	134217728 bit
Self Refresh:	YES
Memory IC Type:	HYPERRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
No. of Functions:	1
Package Equivalence Code:	BGA24,5X5,40
Length:	8 mm
No. of Words Code:	16M
Nominal Supply Voltage / Vsup (V):	3
Terminal Pitch:	1 mm
Maximum Supply Voltage (Vsup):	3.6 V

Category Top Products

MTA4ATF1G64HZ-3G2E1

Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.

MT47H128M16RT-25EAAT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MT48H16M32LFB5-6IT:C

Micron Technology

Micron Technology's MT48H16M32LFB5-6IT:C is a 16MX32 DDR DRAM with 16777216 words and 536870912 bit memory density. It operates at 166 MHz clock frequency, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.

MT41K512M16HA-125:ATR

Micron Technology

DDR3L DRAM; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;

KM416C1000AJ-7

Samsung

Samsung's KM416C1000AJ-7 is a 1MX16 DRAM with 70ns access time, operating at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high memory density and fast data retrieval.

MT47H128M16RT-25EAIT:CTR

Micron Technology

DDR2 DRAM; Terminal Finish: TIN SILVER COPPER;

MTA18ASF2G72AZ-2G3A1

Micron Technology

Micron Technology's MTA18ASF2G72AZ-2G3A1 is a DDR DRAM MODULE with 2GX72 organization, 72 memory width, and 154618822656 bit memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in servers or workstations.

M392B2G70BM0-YH9

Samsung

Samsung M392B2G70BM0-YH9 DRAM features 240 terminals, 1.35V supply, and 667MHz clock frequency. Ideal for servers due to its high memory density of 154618822656 bits and organization of 2GX72, offering fast data processing at temperatures ranging from 0 to 85°C.

MT53D1024M32D4DT-053AIT:D

Micron Technology

LPDDR4 DRAM;

S27KS0642GABHI030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 25 mA;

MT48LC8M16A2TG-6A:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for applications requiring fast memory access and high data density in commercial temperature environments.

MT48LC4M16A2B4-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

MT46V16M16BG-6IT:F

Micron Technology

Micron Technology's MT46V16M16BG-6IT:F is a DDR1 DRAM with 16MX16 organization, operating at 167 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

S27KL0642DPBHB023

Infineon Technologies

Infineon's S27KL0642DPBHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data processing and storage in automotive electronics, IoT devices, and industrial control systems.

M393A2K43DB3-CWE

Samsung

Samsung M393A2K43DB3-CWE DDR4 DRAM Module features 16GX8 organization, 1.2V supply voltage, and 137438953472-bit memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst access mode.

S70KL1282DPBHA023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;

MT48LC32M16A2P-75IT:C

Micron Technology

MT48LC32M16A2P-75IT:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density in a small outline package.