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M378T6553EZS-CE6

Manufacturer

Samsung
Manufacturer's Part Number

M378T6553EZS-CE6
Description

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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M378T6553EZS-CE6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Standby Current:	.064 Amp
Organization:	64MX64
Output Characteristics:	3-STATE
Access Mode:	SINGLE BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	NO
Maximum Supply Current:	1440 mA
No. of Terminals:	240
Maximum Clock Frequency (fCLK):	333 MHz
No. of Words:	67108864 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XDMA-N240
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	95 Cel
Package Code:	DIMM
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Memory IC Type:	DDR DRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	64
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIMM240,40
Refresh Cycles:	8192
Maximum Access Time:	.45 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	1 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.8

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Transcend Information

DDR2 DRAM MODULE;