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K4J10324QD-HJ1A

Manufacturer

Samsung
Manufacturer's Part Number

K4J10324QD-HJ1A
Description

DDR3 DRAM; No. of Terminals: 136; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Standby Current: .1 Amp;
Datasheet

Datasheet

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K4J10324QD-HJ1A Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.1 Amp
Organization:	32MX32
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	1000 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	136
Maximum Clock Frequency (fCLK):	1000 MHz
No. of Words:	33554432 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B136
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	1073741824 bit
Sequential Burst Length:	4,8
Memory IC Type:	DDR3 DRAM
JESD-609 Code:	e1
Memory Width:	32
Qualification:	Not Qualified
Package Equivalence Code:	BGA136,12X17,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Maximum Access Time:	.2 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	1.85
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Power Supplies (V):	1.85

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