MT53E256M16D1DS-046AAT:B by Micron Technology

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MT53E256M16D1DS-046AAT:B

Manufacturer

Micron Technology
Manufacturer's Part Number

MT53E256M16D1DS-046AAT:B
Description

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Interleaved Burst Length: 16,32; Access Mode: MULTI BANK PAGE BURST;
Datasheet

Datasheet

1749 In Stock

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MT53E256M16D1DS-046AAT:B Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	.8 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.06 V
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	200
Maximum Clock Frequency (fCLK):	2133 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B200
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	VFBGA
Width:	10 mm
Other Names:	MT53E256M16D1DS-046AAT:B
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	16,32
Memory IC Type:	LPDDR4 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA200,12X22,32/25
Interleaved Burst Length:	16,32
Length:	14.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.1
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.17 V

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