MT53E256M16D1DS-046AAT:B by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,749	$10.906	$19,074.594

MT53E256M16D1DS-046AAT:B

Manufacturer

Micron Technology
Manufacturer's Part Number

MT53E256M16D1DS-046AAT:B
Description

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Interleaved Burst Length: 16,32; Access Mode: MULTI BANK PAGE BURST;
Datasheet

Datasheet

1749 In Stock

Popular Products

SMBJ18CA

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

Details

BAV99

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138K-13

Diodes Incorporated

BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.

Details

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

OHN3140U

Tt Electronics Plc

OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.

Details

2N7002

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

Details

M85049/85-08W02

TE Connectivity

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

261

Deltrol Controls

Other Relays;

Details

SMBJ18CA

Zowie Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

Details

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

LM7805CT/NOPB

Texas Instruments

LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.

Details

LL4148

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

DS18B20U

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;

Details

EEAGA1H4R7

Panasonic

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

Details

EU2B-YS3103F

Idec

ROTARY SWITCH;

Details

MT53E256M16D1DS-046AAT:B Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	.8 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.06 V
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	200
Maximum Clock Frequency (fCLK):	2133 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B200
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	VFBGA
Width:	10 mm
Other Names:	MT53E256M16D1DS-046AAT:B
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	16,32
Memory IC Type:	LPDDR4 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA200,12X22,32/25
Interleaved Burst Length:	16,32
Length:	14.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.1
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.17 V

Category Top Products

MT53D512M32D2DS-046AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.

IS42S16320D-7TLI

Integrated Silicon Solution

IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.

MT36HTF51272PZ-667H1

Micron Technology

Micron Technology's MT36HTF51272PZ-667H1 is a 512MX72 DDR DRAM MODULE with synchronous operation, self-refresh capability, and 333 MHz clock frequency. Ideal for commercial applications requiring high memory density and fast access times.

TC51V16405CST-60

Toshiba

Toshiba's TC51V16405CST-60 is a 4MX4 EDO DRAM with 16777216-bit memory density. Operating at 3.3V, it offers a max access time of 60ns and supports 4096 refresh cycles. Ideal for commercial applications requiring fast memory access in small outline packages.

MT40A512M16LY-062EAIT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MT42C8256DJ-8

Micron Technology

Micron Technology's MT42C8256DJ-8 is a 256KX8 DRAM with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE WITH EDO access, and offers 80ns max access time. Ideal for video applications due to its high memory density of 2097152 bits and small outline package style.

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

IS43DR81280B-3DBLI

Integrated Silicon Solution

IS43DR81280B-3DBLI by Integrated Silicon Solution is a 128MX8 DDR2 DRAM with 333 MHz clock frequency, operating at 1.8V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

NT6SM16M32AK-S1

Nanya Technology

NT6SM16M32AK-S1 by Nanya Technology is a 16MX32 Synchronous DRAM with 16777216 words, 536870912 bit memory density, and operates at a max clock frequency of 166 MHz. Ideal for applications requiring fast data access and storage in devices like smartphones, tablets, and networking equipment.

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.

MT53E512M32D1ZW-046WT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

MT46H32M16LFBF-5AIT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-5AIT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. Operating at 200 MHz, it features a very thin profile package style and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.

S27KL0642GABHA023

Infineon Technologies

Infineon's S27KL0642GABHA023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.

NT5CC256M16EP-EK

Nanya Technology

NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.

AS4C512M8D4-75BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MT40A1G8WE-075EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.

K4S561632N-LC60

Samsung

Samsung's K4S561632N-LC60 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and a small outline package suitable for commercial applications requiring fast memory access.

IS46TR16256BL-125KBLA2

Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.