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K4T1G164QG-BCE7

Manufacturer

Samsung
Manufacturer's Part Number

K4T1G164QG-BCE7
Description

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4T1G164QG-BCE7 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.01 Amp
Organization:	64MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	150 mA
Terminal Finish:	TIN COPPER SILVER
No. of Terminals:	84
Maximum Clock Frequency (fCLK):	400 MHz
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B84
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	7.5 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	1073741824 bit
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory IC Type:	DDR2 DRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA84,9X15,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	12.5 mm
Maximum Access Time:	.4 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.8 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.8

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