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NE85633-T1B-A
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ManufacturerRenesas Electronics
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Manufacturer's Part NumberNE85633-T1B-A
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
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Datasheet
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DetailsNE85633-T1B-A Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 7000 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .2 W |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 50 |
| JESD-609 Code: | e6 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 12 V |
| Maximum Collector-Base Capacitance: | 1 pF |
