Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NE85633-T1B-A

Manufacturer

Renesas Electronics
Manufacturer's Part Number

NE85633-T1B-A
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet

Datasheet

Not In Stock

Popular Products

BAV99

Philips Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDV304P

Onsemi

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.

Details

MBR0520LT1

Motorola

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Toshiba

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

Details

1N4148

Taiwan Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;

Details

LL4148

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

CC0603KRX7R9BB104

Yageo

Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.

Details

ULN2803ADWG4

Texas Instruments

ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.

Details

LD1117S33CTR

STMicroelectronics

STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.

Details

NC7WZ07P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

SS14

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

Details

STM32H743BIT6

STMicroelectronics

STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.

Details

BAV99

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Promax-johnton

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

Details

1N4148WS

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

Details

FDN306P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

Details

261

Deltrol Controls

Other Relays;

Details

NE85633-T1B-A Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	7000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.2 W
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e6
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	1 pF

Category Top Products

2N2222

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

934056691115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .015 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;

KSC1674R

Onsemi

KSC1674R by Onsemi is an NPN BJT transistor for RF applications. It features a low VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for amplifiers in the ultra-high frequency band with a max operating temp of 150 °C.

PN918

Onsemi

PN918 by Onsemi is an NPN BJT transistor for amplifier applications. It offers a low VCEsat of 0.4V, high power gain of 15dB, and operates in the ultra-high frequency band up to 600MHz. With a max operating temperature of 150 °C, it is ideal for through-hole mounting in RF circuits.

2N5332

Texas Instruments

2N5332 by Texas Instruments is a PNP BJT transistor with 3 terminals, suitable for switching applications. It operates in the ultra-high frequency band up to 800 MHz, with a max collector-emitter voltage of 12V and a DC current gain of at least 20 (hFE). The package style is cylindrical, and it has a max power dissipation of 0.36W at an operating temperature of 175°C.

MCH6001-TL-E

Sanyo Semiconductor

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;

TIS129

Texas Instruments

TIS129 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 800MHz. Ideal for amplifier applications, it has a max power dissipation of 0.25W and operates in the ultra-high frequency band. The package is cylindrical with wire terminals at the bottom.

BFP620H7764XTSA1

Infineon Technologies

BFP620H7764XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 65 GHz, collector-emitter voltage of 2.3V, and collector current of 0.08A. Ideal for high-frequency amplifier circuits in automotive electronics due to AEC-Q101 compliance.

BFQ255A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;

MSC1000MP

STMicroelectronics

STMicroelectronics' MSC1000MP is an NPN BJT transistor for amplifier applications. With a max operating temp of 200 °C, it has a hFE of 15 and VCE of 20V. This surface-mount transistor in round package style with 4 terminals is ideal for L Band frequency applications.

SS9018E

Onsemi

SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.

JANS2N3866AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Package Shape: RECTANGULAR;

BFR92A

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: AMPLIFIER;

HFA3096BZ96

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;

MPSH17G

Onsemi

The Onsemi MPSH17G is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pd of 0.625W, suitable for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, ideal for high-speed circuit designs.

2SC5227A-4-TB-E

Onsemi

Onsemi's 2SC5227A-4-TB-E is an NPN RF BJT with a max power dissipation of 0.2W and fT of 7000MHz. Ideal for small outline packages, it operates up to 150 °C, with IC at 0.07A making it suitable for high-frequency applications like RF amplifiers.

934063143215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;

NE85634-T1-A

Renesas Electronics

NE85634-T1-A by Renesas Electronics is a NPN RF BJT transistor with max fT of 6500 MHz. It operates at 150°C, has Vce(max) of 12V, and Ic(max) of 0.1A. Ideal for L Band applications like amplifiers due to its small outline package and flat terminal form.

2N3010

Texas Instruments

2N3010 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 25, and fT of 600MHz. Ideal for switching applications due to its max. collector-emitter voltage of 11V and max. collector current of 0.5A in a cylindrical package with wire terminals.

MCH4015-TL-H

Onsemi

MCH4015-TL-H by Onsemi is a NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 10GHz and can handle a collector-emitter voltage of 12V. Ideal for X band applications, this transistor offers a max power dissipation of 0.45W in a small outline package.