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NE85633-T1B-A

Manufacturer

Renesas Electronics
Manufacturer's Part Number

NE85633-T1B-A
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet

Datasheet

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NE85633-T1B-A Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	7000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.2 W
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e6
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	1 pF

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