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934067695115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934067695115
Description

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
Datasheet

Datasheet

3362 In Stock

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2N7002

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BSS138-7-F

SPC TECHNOLOGY/ MULTICOMP

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E8WSDC12-32.768KTR

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MBRS1100T3G

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BAV99

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BSS138

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BAV99

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LM317D2TG

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FDC5614P

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934067695115 Technical Details

TYPE	DESCRIPTION
Maximum Time At Peak Reflow Temperature (s):	30
Peak Reflow Temperature (C):	260
Terminal Finish:	TIN
JESD-609 Code:	e3
Moisture Sensitivity Level (MSL):	1

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MMBTH81

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MPSH10RLRM

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2SC5245A-4-TL-E

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934064616115

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BFR520

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BFG35,115

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NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.

BFR183E6327HTSA1

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BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.

Bulk

934067695115

3362 In Stock

Popular Products

ERJ3EKF1002V

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E8WSDC12-32.768KTR

1N4148WT

LM358AN

MBRS1100T3G

BAV99

LM358D-T

BSS138

BAV99

LM317D2TG

FDC5614P

934067695115 Technical Details

Category Top Products

MPS3640

MPSH11RL1

CA3086M

MMBTH81

MPSH10RLRM

2SC5245A-4-TL-E

MSC81002

SD1169

2SC4915-O,LF(B

MCH4009-TL-H

MSC80185

NE662M04-T2-A

934064616115

BFR520

BFR520,215

BFG35,115

BFR183E6327HTSA1

MRF559

2SC2814-2

CPH6003A-TL-E