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MMBTH81

Manufacturer

National Semiconductor
Manufacturer's Part Number

MMBTH81
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

2937 In Stock

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2N2222A

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SBAV99LT1G

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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BSS123,215

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Details

MMBTH81 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.35 W
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Maximum Collector-Base Capacitance:	.85 pF
Maximum VCEsat:	.5 V

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BF959ZL1G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and fT of 700MHz. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates in the very high-frequency band. This through-hole transistor has a min hFE of 35 and can handle up to 0.1A collector current.

SS9018GBU

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SS9018GBU by Onsemi is an NPN RF BJT transistor with a max fT of 1100 MHz. It has a max IC of 0.05 A and hFE of 72, making it ideal for amplifier applications. With a package style of cylindrical and terminal finish in tin, it operates at up to 150°C in the very high-frequency band.

HFA3102BZ96

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NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

KSC2223R

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2N5109

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934061289115

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;

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BFT93,215

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NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

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MMPQ2369R1

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MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

BFP780H6327XTSA1

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BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

BFR93AW-E6327

Infineon Technologies

BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.

BF959RL1G

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BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.

BFR93AWH6327XTSA1

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BFR93AWH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCEO, 0.09A IC, and 6000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.

FFB3946

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MPSH10RL

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MPSH10RL by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high transition frequency. The transistor's cylindrical package with through-hole terminals makes it suitable for various RF small signal circuits.

Bulk

MMBTH81

2937 In Stock

Popular Products

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1N4148WS

SBAV99LT1G

2N2222A

MBRS1100T3G

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1N4148WT

ERJU06F10R0V

USBLC6-2SC6

BSS123,215

LM317T

MMBTH81 Technical Details

Category Top Products

BF959ZL1G

SS9018GBU

HFA3102BZ96

KSC2223R

2N5109

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934061289115

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934063132115

MMPQ2369R1

BFP780H6327XTSA1

BFR93AW-E6327

BF959RL1G

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FFB3946

MPSH10RL

CPH6003A-TL-E

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CPH6001A-TL-E