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NVMFD5C650NLWFT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NVMFD5C650NLWFT1G
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Reference Standard: AEC-Q101; JESD-30 Code: R-PDSO-F8;
Datasheet

Datasheet

2258 In Stock

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NVMFD5C650NLWFT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	21 A
Maximum Pulsed Drain Current (IDM):	502 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	8
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0058 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	186 mJ
Other Names:	NVMFD5C650NLWFT1GOSDKR NVMFD5C650NLWFT1GOSTR NVMFD5C650NLWFT1GOSCT NVMFD5C650NLWFT1G-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	111 A
Peak Reflow Temperature (C):	260

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