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NVMFD5C650NLWFT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNVMFD5C650NLWFT1G
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DescriptionN-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Reference Standard: AEC-Q101; JESD-30 Code: R-PDSO-F8;
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Datasheet
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DetailsNVMFD5C650NLWFT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 21 A |
| Maximum Pulsed Drain Current (IDM): | 502 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 125 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0058 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 186 mJ |
| Other Names: | NVMFD5C650NLWFT1GOSDKR NVMFD5C650NLWFT1GOSTR NVMFD5C650NLWFT1GOSCT NVMFD5C650NLWFT1G-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 111 A |
| Peak Reflow Temperature (C): | 260 |