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NSVMMBTH81LT3G
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ManufacturerOnsemi
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Manufacturer's Part NumberNSVMMBTH81LT3G
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DescriptionPNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
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Datasheet
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DetailsNSVMMBTH81LT3G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 600 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .05 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .225 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .225 W |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | 488-NSVMMBTH81LT3GTR 488-NSVMMBTH81LT3GCT 488-NSVMMBTH81LT3GDKR |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 60 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 20 V |
| Maximum Collector-Base Capacitance: | .85 pF |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .5 V |
