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NSVMMBTH81LT3G

Manufacturer

Onsemi
Manufacturer's Part Number

NSVMMBTH81LT3G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

1342 In Stock

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NSVMMBTH81LT3G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.225 W
Moisture Sensitivity Level (MSL):	1
Other Names:	488-NSVMMBTH81LT3GTR 488-NSVMMBTH81LT3GCT 488-NSVMMBTH81LT3GDKR
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	20 V
Maximum Collector-Base Capacitance:	.85 pF
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.5 V

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