NSVF3007SG3T1G by Onsemi

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NSVF3007SG3T1G

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    NSVF3007SG3T1G
  • Description
    NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .03 A;
  • Datasheet

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NSVF3007SG3T1G Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .03 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .35 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e6
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 12 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260

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