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934067711235

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934067711235
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

2285 In Stock

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LL4148

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FDN5618P

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RC0402FR-071KL

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Details

2N2222A

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Details

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Details

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Details

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Details

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Details

934067711235 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	10500 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.45 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	16 V
Maximum Collector-Base Capacitance:	.28 pF
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

Category Top Products

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MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.

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934067697215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

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TIS86 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.4W, DC current gain of 40, and operates at temperatures up to 150°C. The package style is cylindrical with a round shape and wire terminals.

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TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.

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SD1134-05 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the VHF band. It has a max power dissipation of 5W and can handle up to 0.75A collector current. Ideal for high-frequency applications requiring a single configuration transistor in a round plastic package.

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;