Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,505	$0.042	$104.709

2N7002PV,115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

2N7002PV,115
Description

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

2505 In Stock

Popular Products

LM107H/883C

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

Details

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LM555CM

Renesas Electronics

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148WS

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NE555D

STMicroelectronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

Details

1N4148

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

Details

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20Z/T&R

Maxim Integrated

DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.

Details

PIC18F4550T-I/PT

Microchip Technology

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

Details

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

EU2B-YS2J03F

Idec

ROTARY SWITCH;

Details

ERJU06F10R0V

Panasonic

ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.

Details

BSS138

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

Details

SMBJ18CA

Brightking

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002PV,115 Technical Details

TYPE	DESCRIPTION
Maximum Time At Peak Reflow Temperature (s):	30
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.35 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Power Dissipation (Abs):	.5 W
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.35 A
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Category Top Products

STS4DNF60L

STMicroelectronics

STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.

BSS138

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

IRF3205ZLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SUM110P06-08L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110P06-08L-E3 is a P-channel FET with 60V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.008 ohm max RDS(on), and 272W max power dissipation.

CSD18543Q3A

Texas Instruments

CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.

G3R160MT12J

Genesic Semiconductor

Power Field-Effect Transistors;

IRLML5203TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

IRFP460

Vishay Intertechnology

Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.

IRLML0100TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Terminal Form: GULL WING;

IRF540NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;

IRF7416TRPBF

Infineon Technologies

IRF7416TRPBF by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 45A.

NTMFS5C670NLT1G

Onsemi

NTMFS5C670NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS breakdown voltage, and 440A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as power supplies and motor control systems.

IRF640

Thomson Consumer Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 18 A;

SI7469DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7469DP-T1-GE3 is a P-channel FET with 80V DS breakdown voltage, 40A IDM, and 0.025 ohm RDS(on). Ideal for power management applications due to its 83W max power dissipation, small outline package style, and -55 to +150°C operating temperature range.

FDMS86101

Onsemi

FDMS86101 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and 135mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W in a small outline package.

FQB34P10TM

Onsemi

FQB34P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 134A, EAS of 2200mJ, and ID of 33.5A. With a 0.06 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power electronics.

IRF540NLPBF

Infineon Technologies

Infineon's IRF540NLPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 185mJ EAS, and 0.044 ohm RDS(on). With a max power dissipation of 130W and operating temperature of 175°C, it offers reliable performance in various electronic systems.

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;

FDD8424H_F085A

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;

MSCSM170AM11CT3AG

Microchip Technology

MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.