MT53D1024M32D4DT-053WT:D by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,759	Request Pricing	-

MT53D1024M32D4DT-053WT:D

Manufacturer

Micron Technology
Manufacturer's Part Number

MT53D1024M32D4DT-053WT:D
Description

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 32; No. of Functions: 1;
Datasheet

Datasheet

1759 In Stock

Popular Products

1N4148

Terry Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

1N4148WS

Multicomp Pro

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MBRA160T3G

Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

Details

BAV99

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

L7805CV

STMicroelectronics

L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.

Details

1554216004

Molex

WIRE AND CABLE;

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

261

Deltrol Controls

Other Relays;

Details

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

Details

LM358AN

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

MBRS3200T3G

Onsemi

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

MBR0520LT1

Onsemi

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

Details

SS14

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

First Components International

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

SS14

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Crimson Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FSMLF327

Fox Electronics

FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.

Details

MT53D1024M32D4DT-053WT:D Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	1GX32
Maximum Seated Height:	.95 mm
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
No. of Terminals:	200
Maximum Clock Frequency (fCLK):	1869.1 MHz
No. of Words:	1073741824 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	10 mm
Other Names:	MT53D1024M32D4DT-053WT:D MT53D1024M32D4DT-053 WT:D-ND
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	34359738368 bit
Self Refresh:	YES
Sequential Burst Length:	16,32
Memory IC Type:	LPDDR4 DRAM
Minimum Operating Temperature:	-25 Cel
Memory Width:	32
No. of Functions:	1
Package Equivalence Code:	BGA200,12X20,32/25
Interleaved Burst Length:	16,32
Length:	14.5 mm
No. of Words Code:	1G
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.95 V

Category Top Products

IS42S16160J-7TLI-TR

Integrated Silicon Solution

IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.

W631GG6NB12I

Winbond Electronics

W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.

MT53E256M32D2DS-046WT:B

Micron Technology

LPDDR4 DRAM;

S70KL1282DPBHA023

Infineon Technologies

Infineon's S70KL1282DPBHA023 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.

W9825G6KH-6

Winbond Electronics

W9825G6KH-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5 ns max access time. It operates at 3.3V and is suitable for commercial applications requiring high-speed synchronous memory solutions.

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.

MT53D512M32D2DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

S27KL0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Package Equivalence Code: BGA24,5X5,40;

MTA18ASF4G72HZ-3G2F1

Micron Technology

Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.

IS42S32400F-6BL

Integrated Silicon Solution

IS42S32400F-6BL by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

MT48LC4M32B2P-6AXIT:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:LTR is a 4MX32 Synchronous DRAM with a memory density of 134217728 bits. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

AS4C4M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C4M16SA-6BIN is a 3.3V, 4MX16 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode, operates at -40 to 85°C, and has a memory density of 67108864 bits.

MT47H128M8SH-25EAAT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAAT:M is a DDR2 DRAM with 128MX8 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed performance. Ideal for applications requiring fast memory access in automotive electronics or industrial control systems.

NT5TU64M16HG-ACH

Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.

IS42S32200L-7TLI

Integrated Silicon Solution

IS42S32200L-7TLI by Integrated Silicon Solution is a 2MX32 Synchronous DRAM with 32-bit memory width. It operates at 143 MHz clock frequency, has 86 terminals, and supports self-refresh mode. Ideal for industrial applications requiring high-speed data processing in compact form factors.

IS43TR16256B-125KBLI

Integrated Silicon Solution

IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.

IS42S32800J-6TLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MT40A2G4SA-062E:E

Micron Technology

Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MT48LC32M16A2P-75IT:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.