MT47H128M8SH-25EAAT:M by Micron Technology

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MT47H128M8SH-25EAAT:M

Manufacturer

Micron Technology
Manufacturer's Part Number

MT47H128M8SH-25EAAT:M
Description

DDR2 DRAM; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Terminal Pitch: .8 mm;
Datasheet

Datasheet

238 In Stock

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MT47H128M8SH-25EAAT:M Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	128MX8
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
No. of Terminals:	60
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B60
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Width:	8 mm
Other Names:	MT47H128M8SH-25E AAT:M-ND MT47H128M8SH-25EAAT:M
No. of Ports:	1
Memory Density:	1073741824 bit
Self Refresh:	YES
Memory IC Type:	DDR2 DRAM
Memory Width:	8
No. of Functions:	1
Length:	10 mm
Maximum Access Time:	.4 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.9 V

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