MT46H128M32L2KQ-6WT:B by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,671	Request Pricing	-

MT46H128M32L2KQ-6WT:B

Manufacturer

Micron Technology
Manufacturer's Part Number

MT46H128M32L2KQ-6WT:B
Description

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
Datasheet

Datasheet

1671 In Stock

Popular Products

STM32F405RGT6TR

STMicroelectronics

STM32F405RGT6TR by STMicroelectronics is a 32-bit microcontroller with 64 terminals, operating at a max frequency of 26 MHz. It features DAC and ADC channels, along with DMA support. Ideal for industrial applications requiring low power consumption and high-speed processing capabilities.

Details

FDLL4148

Onsemi

FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.

Details

BAV99

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

NE555D

Texas Instruments

NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.

Details

1N4148WT

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS84PH6327XTSA2

Infineon Technologies

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

Details

M24308/2-1F

Cinch Connectivity Solutions

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;

Details

LL4148

Secos

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

Details

1N4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WT

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDV303N

Onsemi

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

Details

1N4148WT

Jiangsu Changjiang Electronics Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Texas Instruments

1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.

Details

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

Details

1N4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

North American Philips Discrete Products Div

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;

Details

MT46H128M32L2KQ-6WT:B Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.00001 Amp
Organization:	128MX32
Output Characteristics:	3-STATE
Maximum Seated Height:	.75 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	140 mA
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals:	168
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	134217728 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	S-PBGA-B168
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	12 mm
Other Names:	MT46H128M32L2KQ-6WT:B MT46H128M32L2KQ-6 WT:B-ND
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	2,4,8,16
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-20 Cel
Memory Width:	32
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA168,23X23,20
Refresh Cycles:	8192
Interleaved Burst Length:	2,4,8,16
Length:	12 mm
Maximum Access Time:	5 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.5 mm
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.95 V
Power Supplies (V):	1.8

Category Top Products

MT40A1G16WBU-083E:B

Micron Technology

Micron Technology's MT40A1G16WBU-083E:B is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

KVR16LS11/4

Kingston Technology Company

Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.

IS43TR16128DL-107MBL

Integrated Silicon Solution

IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

AS4C8M16SA-6TIN

Alliance Memory

Alliance Memory's AS4C8M16SA-6TIN is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a fast access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring reliable synchronous memory with small outline package style.

MT47H64M16HR-3:HTR

Micron Technology

Micron Technology's MT47H64M16HR-3:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in a compact grid array package.

MT48LC8M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:GTR is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This DRAM is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.

MT48LC16M16A2TG-75

Micron Technology

MT48LC16M16A2TG-75 by Micron Technology is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for synchronous memory applications requiring fast access times and low power consumption.

AS4C32M16SB-7TIN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TIN is a 32MX16 SDRAM with 3.3V supply, operating from -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in compact form factors.

MT48LC16M16A2P-7EIT:DTR

Micron Technology

MT48LC16M16A2P-7EIT:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is ideal for industrial applications requiring fast and reliable memory performance.

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.

M464S3254CTS-L7A

Samsung

Samsung M464S3254CTS-L7A is a 32MX64 DRAM module with 3.3V supply, operating at 133MHz. Ideal for commercial applications, it offers 70°C max temp, DUAL BANK PAGE BURST access mode, and 8192 refresh cycles for efficient memory performance.

MT46H32M16LFBF-6AIT:C

Micron Technology

MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.

IS43TR16512BL-125KBLI-TR

Integrated Silicon Solution

IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.

K4B2G0846D-HCH9

Samsung

Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.

MTA4ATF51264HZ-2G3B1

Micron Technology

Micron's MTA4ATF51264HZ-2G3B1 is a 512MX64 DDR DRAM MODULE with CMOS tech. Operating at 1.2V, it offers 536870912 words memory width and 34359738368 bit density. Ideal for applications requiring high-speed synchronous operation in microelectronic assemblies.

W957A8MFYA5I

Winbond Electronics

EDO DRAM;

LH2464-10

Sharp Corporation

Sharp Corporation's LH2464-10 is a 64KX4 PAGE MODE DRAM with 3-STATE output. Operating at 5V, it offers a memory density of 262144 bit and refresh cycles of 256. Ideal for commercial applications, this DRAM has a max access time of 100 ns and operates in asynchronous mode.

S27KL0642DPBHA020

Infineon Technologies

Infineon's S27KL0642DPBHA020 is a 8MX8 DRAM with 3V nominal voltage, operating at up to 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.

MT48LC4M32B2P-7:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.

MT42L128M32D1TK-25AAT:A

Micron Technology

Micron Technology's MT42L128M32D1TK-25AAT:A is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.