MT46H64M16LFBF-5IT:BTR by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,211	$5.215	$11,529.370

MT46H64M16LFBF-5IT:BTR

Manufacturer

Micron Technology
Manufacturer's Part Number

MT46H64M16LFBF-5IT:BTR
Description

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
Datasheet

Datasheet

2211 In Stock

Popular Products

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.

Details

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

Details

FSMLF327

Fox Electronics

FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.

Details

CRG0805F10K

Tyco Electronics Components

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

Details

M39029/56-351

Itt Cannon

CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;

Details

ULN2003ADR

Texas Instruments

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LM7805CT

Texas Instruments

LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.

Details

1N4148WT

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

Details

RC0805FR-0710RL

Yageo

Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.

Details

OPA2277UA/2K5

Texas Instruments

OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.

Details

1N4148WS

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

2N2222A

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

Details

MT46H64M16LFBF-5IT:BTR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	64MX16
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	60
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B60
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	VFBGA
Width:	8 mm
Other Names:	557-1912-1 557-1912-2 MT46H64M16LFBF-5IT:BTR-ND MT46H64M16LFBF-5IT:BTR 557-1912-6 MT46H64M16LFBF-5 IT:B TR-ND
No. of Ports:	1
Memory Density:	1073741824 bit
Self Refresh:	YES
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Length:	9 mm
Maximum Access Time:	5 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.95 V

Category Top Products

M392B2G70BM0-YH9

Samsung

Samsung M392B2G70BM0-YH9 DRAM features 240 terminals, 1.35V supply, and 667MHz clock frequency. Ideal for servers due to its high memory density of 154618822656 bits and organization of 2GX72, offering fast data processing at temperatures ranging from 0 to 85°C.

MT40A256M16LY-062EAIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.

IS43TR16256BL-125KBL-TR

Integrated Silicon Solution

IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

MT48LC4M32B2P-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.

W9816G6JH-6I

Winbond Electronics

W9816G6JH-6I by Winbond Electronics is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data processing in a compact package.

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.

K4A4G165WF-BCTD

Samsung

Samsung's K4A4G165WF-BCTD is a 256MX16 DDR4 DRAM with 4294967296-bit memory density. Operating at 1.2V, it has a memory width of 16 and supports CMOS technology. Ideal for applications requiring high-speed data processing in devices like computers and servers due to its efficient organization and max operating temperature of 85°C.

IS42S32800J-7BLI

Integrated Silicon Solution

IS42S32800J-7BLI by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at a max frequency of 143 MHz. Ideal for industrial applications requiring fast memory access and common I/O type in a compact GRID ARRAY package.

AS4C16M16SA-7TCNTR

Alliance Memory

AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

KM4132G112Q-5

Samsung

Samsung's KM4132G112Q-5 is a 1MX32 DRAM with 3.3V supply, operating at 200MHz clock frequency. Ideal for synchronous graphics RAM applications due to its 1048576 words capacity, 4.5ns access time, and dual bank page burst access mode.

IS42S16400J-7TLI

Integrated Silicon Solution

IS42S16400J-7TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 16-bit memory width. It operates at 143 MHz clock frequency, has 4096 refresh cycles, and supports common I/O type. Ideal for industrial applications requiring fast data access and reliable performance in a compact package.

MT48LC16M16A2P-7E

Micron Technology

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

MT46H128M16LFB7-6IT:B

Micron Technology

Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

MT40A1G16KH-062EAAT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).

MT47H128M16RT-25EAIT:CTR

Micron Technology

DDR2 DRAM; Terminal Finish: TIN SILVER COPPER;

W3H32M64E-533SBI

Mercury Systems

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B208;