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MT40A1G8WE-075E:BTR
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ManufacturerMicron Technology
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Manufacturer's Part NumberMT40A1G8WE-075E:BTR
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DescriptionDDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;
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Datasheet
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DetailsMT40A1G8WE-075E:BTR Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .046 Amp |
| Organization: | 1GX8 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | MULTI BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.14 V |
| Surface Mount: | YES |
| Maximum Supply Current: | 63 mA |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 78 |
| Maximum Clock Frequency (fCLK): | 1333.33 MHz |
| No. of Words: | 1073741824 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B78 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 95 Cel |
| Package Code: | TFBGA |
| Width: | 8 mm |
| Other Names: | 557-1726-1 557-1726-2 MT40A1G8WE-075E:B TR-ND 557-1726-6 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 8589934592 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 8 |
| Memory IC Type: | DDR4 DRAM |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 8 |
| No. of Functions: | 1 |
| Package Equivalence Code: | BGA78,6X13,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 8 |
| Length: | 12 mm |
| No. of Words Code: | 1G |
| Nominal Supply Voltage / Vsup (V): | 1.2 |
| Additional Features: | AUTO/SELF REFRESH |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .8 mm |
| Maximum Supply Voltage (Vsup): | 1.26 V |