MT41K256M16TW-107AAT:PTR by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
956	$7.904	$7,556.224

MT41K256M16TW-107AAT:PTR

Manufacturer

Micron Technology
Manufacturer's Part Number

MT41K256M16TW-107AAT:PTR
Description

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; No. of Functions: 1;
Datasheet

Datasheet

956 In Stock

Popular Products

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Synsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

North American Philips Discrete Products Div

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

RC0402JR-070RL

Yageo

Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.

Details

ULN2803ADWR

Texas Instruments

ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.

Details

1N4148WS

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ERJ2RKF1002X

Panasonic

Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM317T

Samsung

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;

Details

LM7805CT

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

LM317AEMP/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;

Details

SMBJ18CA

International Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

SMBJ18CA

Microsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Weitron Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

43025-0400

Molex

The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.

Details

2N7002

Plessey Semiconductors Discrete Components Div

Other Transistors;

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

RC0805FR-0710RL

Yageo

Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.

Details

MT41K256M16TW-107AAT:PTR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.012 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Surface Mount:	YES
Maximum Supply Current:	147 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	934.57 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	TFBGA
Width:	8 mm
Other Names:	557-1741-6 557-1741-1 MT41K256M16TW-107 AAT:P TR-ND 557-1741-2
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	8
Memory IC Type:	DDR3L DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	14 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.35
Additional Features:	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.45 V

Category Top Products

K4H561638H-UCB3

Samsung

Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.

IS42S16160J-6BLI-TR

Integrated Silicon Solution

IS42S16160J-6BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has a memory density of 268Mbit, and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density in compact form factors.

MT41K512M16VRN-107AIT:P

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.

MT41K256M16HA-125IT:E

Micron Technology

Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

W9812G6KH-6I

Winbond Electronics

The Winbond Electronics W9812G6KH-6I is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V, featuring a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

S70KL1282DPBHA023

Infineon Technologies

Infineon's S70KL1282DPBHA023 is a 16MX8 DRAM with 200 MHz clock frequency, operating at 3.6V max voltage. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and very thin profile grid array package style.

W9825G6KH-5

Winbond Electronics

W9825G6KH-5 by Winbond Electronics is a 16Mx16 Synchronous DRAM with 268MB memory density. Operating at 3.3V, it offers a max access time of 4.5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed synchronous memory solutions in compact form factors.

AS4C512M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BIN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MT48LC16M16A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MT53E256M32D2DS-046IT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046IT:B is a 256MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates in an industrial temperature range and has a very thin profile package style. This memory module is commonly used in applications that require high-speed data processing and reliable performance.

MT41K256M8DA-125:K

Micron Technology

Micron Technology's MT41K256M8DA-125:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.

MT53E128M32D2DS-053AIT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AIT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and low standby voltage.

MT48LC8M16A2TG-7E:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.

MT41J256M16HA-125:ETR

Micron Technology

Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.

IS42S16400J-6TL-TR

Integrated Silicon Solution

IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.

MT47H64M16NF-25EXIT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.

MT41K128M16JT-125AIT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;

MT40A256M16GE-083EAIT:B

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.