Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IS42S32800J-6TLI

Manufacturer

Integrated Silicon Solution
Manufacturer's Part Number

IS42S32800J-6TLI
Description

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

CRGCQ0805F10K

TE Connectivity

TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.

Details

M24308/2-1F

Cristek Interconnects

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;

Details

1N4148WS

Vishay Intertechnology

Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

LM317T

Texas Instruments

LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.

Details

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

Details

LM358AN

NXP Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

M39029/56-351

Carlisle Interconnect Technologies

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;

Details

BAV99

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

Tri-star Electronics International

CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;

Details

BSS138

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

Details

BAV99

Sprague Electric

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM2931Z-5.0RPG

Onsemi

LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

LL4148-GS08

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

Details

2N7002

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

Details

06035C104KAT2A

KYOCERA AVX

06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

Details

IS42S32800J-6TLI Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.004 Amp
Organization:	8MX32
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	10
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	YES
Maximum Supply Current:	190 mA
Terminal Finish:	Tin (Sn)
No. of Terminals:	86
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	8388608 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G86
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	TSOP2
Width:	10.16 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	268435456 bit
Self Refresh:	YES
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Memory Width:	32
No. of Functions:	1
Package Equivalence Code:	TSSOP86,.46,20
Refresh Cycles:	4096
Interleaved Burst Length:	1,2,4,8
Length:	22.22 mm
Maximum Access Time:	5.4 ns
No. of Words Code:	8M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Category Top Products

NT5TU64M16DG-3C

Nanya Technology

NT5TU64M16DG-3C by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as servers, workstations, and networking equipment.

KM416V256ALT-7

Samsung

Samsung's KM416V256ALT-7 is a 256Kx16 DRAM with 3.3V supply, operating in asynchronous mode. It features fast page access, 70ns max access time, and 512 refresh cycles. Ideal for applications requiring high-speed memory with low power consumption.

MT46V16M16P-5B:MTR

Micron Technology

Micron Technology's MT46V16M16P-5B:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for applications requiring fast access times and high memory capacity in commercial temperature environments.

MTA16ATF2G64HZ-2G6E1

Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.

MT53E1536M32D4DT-046WT:A

Micron Technology

LPDDR4 DRAM;

MT41K64M16TW-107AUT:J

Micron Technology

DDR3L DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;

MT47H32M16NF-25EIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and AEC-Q100 screening for industrial applications.

K4T51163QG-HCE6

Samsung

Samsung's K4T51163QG-HCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 1.8V supply voltage. Ideal for high-performance applications requiring fast data processing and storage with a memory density of 536870912 bits.

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.

IS43TR16256BL-125KBLI

Integrated Silicon Solution

IS43TR16256BL-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a self-refresh feature. It is commonly used in industrial applications requiring high memory density and fast data processing.

IS43TR16512S2DL-125KBLI

Integrated Silicon Solution

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

M12L64164A-5BIG2Y

Elite Semiconductor Microelectronics Technologyinc

Elite Semiconductor Microelectronics Technologyinc's M12L64164A-5BIG2Y is a 4MX16 Synchronous DRAM with 67108864 bit memory density. Operating at 3.3V, it offers a max access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.

MT48LC8M16A2P-6A:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.

IS42S16320D-7TL

Integrated Silicon Solution

IS42S16320D-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features self-refresh and common I/O type, suitable for applications requiring fast memory access in commercial temperature environments.

MT48LC8M16A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh mode, common I/O type, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory access in compact form factors.

MT41K64M16TW-107AAT:J

Micron Technology

Micron Technology's MT41K64M16TW-107AAT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for applications requiring high-speed and low-power memory solutions.

MT47H64M16HR-3L:H

Micron Technology

MT47H64M16HR-3L:H by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and consumes up to 230 mA. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MT40A512M8SA-062EIT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.

MT53D512M32D2DS-046WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.

MT47H64M16HR-3:HTR

Micron Technology

Micron Technology's MT47H64M16HR-3:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in a compact grid array package.