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SI4925DDY-T1-GE3

Manufacturer

Vishay Siliconix
Manufacturer's Part Number

SI4925DDY-T1-GE3
Description

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Qualification: Not Qualified;
Datasheet

Datasheet

Not In Stock

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SI4925DDY-T1-GE3 Technical Details

TYPE	DESCRIPTION
Other Names:	SI4925DDY-T1-GE3TR SI4925DDY-T1-GE3DKR SI4925DDY-T1-GE3CT SI4925DDYT1GE3 SI4925DDY-T1-GE3-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7.3 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.029 ohm

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SI4925DDY-T1-GE3 Technical Details

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