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SI2312CDS-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI2312CDS-T1-GE3
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain Current (Abs) (ID): 6 A; Package Shape: RECTANGULAR;
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Datasheet
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DetailsSI2312CDS-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 6 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 2.1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .0318 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | SI2312CDS-T1-GE3TR SI2312CDS-T1-GE3DKR SI2312CDST1GE3 SI2312CDS-T1-GE3CT |
| Maximum Feedback Capacitance (Crss): | 55 pF |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 6 A |
| Peak Reflow Temperature (C): | 260 |
