Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,261	Request Pricing	-

BAR10

Manufacturer

STMicroelectronics
Manufacturer's Part Number

BAR10
Description

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet

Datasheet

2261 In Stock

Popular Products

BAV99

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Dc Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBR0530T1G

Onsemi

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

Details

NE555D

STMicroelectronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LM7805CT

Texas Instruments

LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.

Details

LM358AN

Texas Instruments

LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.

Details

LL4148

General Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Brightking

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ULN2803A

Vishay Intertechnology

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;

Details

NC7WZ17P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

LAN8720A-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

BAV99

Electronic Devices

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Adi Electronics

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;

Details

LM358DR2G

Onsemi

LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.

Details

PIC18F4550-I/PT

Microchip Technology

PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.

Details

1N4148WS

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ERJ3EKF1002V

Panasonic

Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.

Details

BAR10 Technical Details

TYPE	DESCRIPTION
Package Body Material:	GLASS
Maximum Forward Voltage (VF):	1 V
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Maximum Output Current:	.035 A
Sub-Category:	Rectifier Diodes
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	2
Terminal Position:	AXIAL
Maximum Diode Capacitance:	1.2 pF
Package Style (Meter):	LONG FORM
Technology:	SCHOTTKY
JESD-30 Code:	O-LALF-W2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
Maximum Repetitive Peak Reverse Voltage:	20 V
JEDEC-95 Code:	DO-35
JESD-609 Code:	e0
Minimum Operating Temperature:	-65 Cel
Maximum Non Repetitive Peak Forward Current:	.1 A
Diode Element Material:	SILICON
Qualification:	Not Qualified

Category Top Products

BAT15-05W-E6433

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Minimum Breakdown Voltage: 4 V; Minimum Operating Temperature: -55 Cel; Maximum Output Current: .11 A;

HSMS-2850-BLK

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-013H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PMBD353,235

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS66SB82

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBD452LT1G

Onsemi

MMBD452LT1G by Onsemi is a Schottky mixer diode with low barrier type, suitable for very high frequency to ultra high frequency applications. It features series connected, center tap configuration with 2 elements and max diode capacitance of 1.5 pF. This small outline package has a max operating temperature of 125°C and is designed for surface mount applications in microwave circuits.

HSMS-2812

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

DB3X313N0L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA892

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

934056490115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TMM5711

STMicroelectronics

TMM5711 by STMicroelectronics is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max power dissipation of 0.43W. Ideal for applications requiring high-frequency signal mixing and detection in electronic circuits.

BAT17-07E6327

Siemens

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-064P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1N5712-AR2

STMicroelectronics

1N5712-AR2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C. Ideal for VHF to UHF applications due to its isolated case connection and single configuration in a glass package. With a max power dissipation of 0.43 W, it offers reliable performance in high-frequency circuits.

1SS295-TE85L(F)

Toshiba

Toshiba's 1SS295-TE85L(F) is a Schottky mixer diode with ultra-high frequency band, 0.9 pF capacitance, and 0.32 V forward voltage. Ideal for microwave applications due to its dual-element design and small outline package style.

BAT15-123H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SMMBD770T1G

Onsemi

The Onsemi SMMBD770T1G is a Schottky mixer diode with a max forward voltage of 0.5V and output current of 0.2A. It operates at up to 125°C, making it suitable for microwave applications requiring high-speed signal detection and mixing in surface-mount configurations.

SBL-804

Onsemi

SBL-804 by Onsemi is a surface mount microwave mixer diode with GaAs element. It operates from 11 GHz to 100 GHz, with max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

ESGD100

Onsemi

The Onsemi ESGD100 is a Schottky mixer diode with 0.32 pF capacitance, operating up to 150 °C. It is a single-config chip carrier package for microwave applications. This surface-mount diode has a rectangular shape and no lead terminals, making it ideal for high-frequency circuit designs.

HSMS-281C-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;