Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
95	Request Pricing	-

5082-2835#T50

Manufacturer

Broadcom
Manufacturer's Part Number

5082-2835#T50
Description

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet

Datasheet

95 In Stock

Popular Products

DS18B20Z+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;

Details

1N4148

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Weitron Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Details

LM107H

Linear Technology

LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.

Details

LL4148

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

NUP2105LT1G

Onsemi

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

Details

ULN2803A

YOUTAI SEMICONDUCTOR CO LTD

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;

Details

MBR0520L-T1

Won-top Electronics

MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.

Details

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

LL4148

General Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

Shenzhen Socay Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

Details

2N7002

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

Details

SMBJ18CA

Pulse Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

SS14

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

5082-2835#T50 Technical Details

TYPE	DESCRIPTION
Package Body Material:	GLASS
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	AXIAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	LONG FORM
Technology:	SCHOTTKY
JESD-30 Code:	O-LALF-W2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Case Connection:	ISOLATED
Moisture Sensitivity Level (MSL):	1

Category Top Products

BAT14-094ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SPD-221

Onsemi

The Onsemi SPD-221 is a surface mount microwave mixer diode with GaAs element. It operates from 3.9 GHz to 18 GHz, with a max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

BAT15-099LRH-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Schottky Barrier Type: LOW BARRIER; No. of Elements: 2;

BAT15-110R

Infineon Technologies

MIXER DIODE; Terminal Position: QUAD; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

BAT14-073H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT62-03WE6327

Infineon Technologies

Infineon's BAT62-03WE6327 is a Schottky mixer diode with low barrier type. It has a max forward voltage of 1V and can handle up to 40V repetitive peak reverse voltage. Ideal for microwave applications due to its small outline package style and high operating temperature of 150°C.

HSMS-285L-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2822-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-034H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SMMBD301LT1G

Onsemi

The Onsemi SMMBD301LT1G is a single Schottky mixer diode with ultra-high frequency capabilities. It features a max diode capacitance of 1.5 pF and operates in a temperature range from -55 to 125 °C. Ideal for microwave applications, this surface-mount diode has a small outline package style and tin terminal finish.

HSMS-2852-BLK

Broadcom

HSMS-2852-BLK by Broadcom is a Schottky mixer diode with Gallium Arsenide elements. Operating from 0.915 GHz to 4 GHz, it has a max temp of 150°C. This small outline diode is ideal for microwave applications due to its dual terminal position and surface mount capability.

BA483116

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-073P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

DMJ3940-000

Skyworks Solutions

The Skyworks Solutions DMJ3940-000 is a complex configuration mixer diode with Schottky technology. Operating in S band to X band, it has 8 elements and high barrier Schottky diode element material. This surface-mount diode with 0.3 pF capacitance is ideal for microwave applications up to 150°C.

BAS70-04W/T4

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-8101-BLKG

Broadcom

HSMS-8101-BLKG by Broadcom is a single Schottky mixer diode with a frequency range of 10-14 GHz. It features a max diode capacitance of 0.26 pF and operates at temperatures up to 150°C. Ideal for microwave applications, this surface-mount diode has a small outline package with gull wing terminals.

1N5712-B2

STMicroelectronics

1N5712-B2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications due to its isolated case connection and 0.43 W power dissipation capability in a glass package.

HSMS-282C-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR10-B2

STMicroelectronics

STMicroelectronics' BAR10-B2 is a single Schottky mixer diode with 1.2 pF capacitance, suitable for VHF to UHF applications. With a glass package and operating temperature range of -65 °C to 200°C, it features an isolated case connection and axial terminal position.

NSR15SDW1T4G

Onsemi

NSR15SDW1T4G by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C, has a peak reflow temp of 260°C, and is ideal for microwave applications due to its low capacitance and high reverse current specs.