Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
316	Request Pricing	-

BAT62-03WE6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT62-03WE6327
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

316 In Stock

Popular Products

2N2222A

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

EPCS4SI8N

Altera

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

Details

MBRS140T3G

Onsemi

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

Details

SMBJ18CA

Forward International Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

1N4148WS

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Itt Cannon

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

Details

LM7805CT

Onsemi

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

LL4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAV99

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H/883C

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;

Details

1N4148WS-7-F

Diodes Incorporated

1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

ULN2803A

Motorola

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;

Details

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

1N4148

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

MBR1560CT

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;

Details

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

Details

BAT62-03WE6327 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	1 V
Config:	SINGLE
Diode Type:	MIXER DIODE
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	DUAL
Maximum Diode Capacitance:	.6 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Repetitive Peak Reverse Voltage:	40 V
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Schottky Barrier Type:	LOW BARRIER
Maximum Power Dissipation:	.1 W
Peak Reflow Temperature (C):	260

Category Top Products

BAT45

STMicroelectronics

BAT45 by STMicroelectronics is a Schottky mixer diode designed for ultra-high frequency applications. It features a max reverse current of 0.1 µA, capacitance of 1.1 pF, and operates b/w -65 °C to 125°C. Ideal for microwave mixers and detectors in communication systems.

933613620133

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2822-TR2G

Broadcom

HSMS-2822-TR2G by Broadcom is a microwave mixer diode with Schottky technology. It operates in the C band frequency range and has 2 series-connected elements. This small outline diode has a max power dissipation of 0.25W and is suitable for surface mount applications in high-frequency circuits.

MMSD701T1G

Onsemi

MMSD701T1G by Onsemi is a single Schottky mixer diode with 70V reverse voltage, suitable for very high to ultra high frequency applications. It features a max diode capacitance of 1pF and operates in temperatures ranging from -55°C to 125°C. This small outline package with gull wing terminals is designed for surface mount assembly.

BA423A143

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HSMS-2822

Broadcom

Broadcom's HSMS-2822 is a Schottky mixer diode with 2 elements, max VF of 0.34V, and max operating temp of 150°C. Ideal for microwave applications due to its low capacitance (1pF), small outline package style, and series connected configuration.

MMBD101L

Onsemi

MMBD101L by Onsemi is a single Schottky mixer diode with ultra high frequency range. It has a max forward voltage of 0.6V and operates at temperatures up to 150 °C. Ideal for microwave applications, this diode features a small outline package with gull wing terminals for surface mount assembly.

BAT15-014S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Noise Figure: 5.5 dB;

BAT1704WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2860-TR1G

Broadcom

Broadcom's HSMS-2860-TR1G is a Schottky mixer diode with a frequency range of 0.915 GHz to 5.8 GHz, ideal for C band applications. It features a small outline package with nickel palladium gold finish and can operate in temperatures ranging from -65°C to 150°C. The diode has a max power dissipation of 0.25 W and low diode capacitance of 0.35 pF, making it suitable for microwave mixing and detection tasks in various electronic systems.

MMBD353LT1

Onsemi

MMBD353LT1 by Onsemi is a series connected, 2-element mixer diode with ultra high frequency band. It has a max diode capacitance of 1 pF and operates at up to 125 °C. Ideal for microwave applications requiring small outline surface mount packages.

BAT62-03WE6327XT

Infineon Technologies

Infineon's BAT62-03WE6327XT is a Schottky mixer diode with low barrier type. It has a max forward voltage of 1V and reverse test voltage of 40V. Ideal for microwave applications due to its small outline package style, high operating temperature of 150°C, and low diode capacitance of 0.6pF.

BAT15-05W-E6433

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Minimum Breakdown Voltage: 4 V; Minimum Operating Temperature: -55 Cel; Maximum Output Current: .11 A;

934054935135

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1502ELSE6433XTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMDL301T1G

Onsemi

MMDL301T1G by Onsemi is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.45V. This small outline diode has a max power dissipation of 0.2W and is suitable for applications requiring high-frequency signal mixing and detection.

HSMS-282K-BLKG

Broadcom

HSMS-282K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA, suitable for microwave applications requiring high frequency performance in temperatures ranging from -65 to 150°C.

BAT17-05WE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR19-AZX

STMicroelectronics

BAR19-AZX by STMicroelectronics is a single mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max forward voltage of 0.6V and max output current of 30A. This glass-packaged diode is ideal for applications requiring an isolated case connection and axial terminal position.

HSMS-2852-BLKG

Broadcom

HSMS-2852-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz in L Band. It features a plastic/epoxy package, series connected configuration, and nickel palladium gold finish. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.