Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MA4E2054B1-287T

Manufacturer

M/a-com
Manufacturer's Part Number

MA4E2054B1-287T
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

LL4148

Semtech Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

NC7WZ17P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

Details

LL4148GS08

Temic Semiconductors

LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.

Details

SS14

Vishay Intertechnology

Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.

Details

LL4148

Micronas Semiconductor Holding Ag

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;

Details

1N4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

STM32H743IIT6

STMicroelectronics

STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148W-T

Micro Commercial Components

1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.

Details

2N2222A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

DP83848IVVX/NOPB

Texas Instruments

Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.

Details

MA4E2054B1-287T Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	X BAND
Maximum Output Current:	.02 A
Surface Mount:	YES
Maximum Reverse Current:	.5 uA
No. of Terminals:	3
Maximum Pulsed Input Power:	.075 W
Terminal Position:	DUAL
Maximum Diode Capacitance:	.3 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	3 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel
Reverse Test Voltage:	3 V
Minimum Operating Temperature:	-65 Cel
Diode Element Material:	SILICON
Schottky Barrier Type:	LOW BARRIER
Additional Features:	LOW NOISE
Peak Reflow Temperature (C):	260

Category Top Products

HSMS-281L-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1705E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA484AMO

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

TMM6263

STMicroelectronics

TMM6263 by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.41V and max repetitive peak reverse voltage of 60V. This glass-packaged diode is suitable for applications requiring high-frequency signal mixing and detection.

BAR28-AZ2

STMicroelectronics

BAR28-AZ2 by STMicroelectronics is a Schottky mixer diode with 2 pF capacitance. Operating from -65 °C to 200°C, it covers very high to ultra high frequencies. With an isolated case connection, it's ideal for microwave applications.

BAT15-04R-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Frequency: 12 GHz; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

BAT15-043H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MA4E2037

M/a-com

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2822G

Broadcom

Broadcom's HSMS-2822G is a Schottky mixer diode with 2 elements, series connected in a small outline package. It has a max operating temperature of 150°C and can handle up to 0.25W of pulsed input power. Ideal for microwave applications requiring low diode capacitance and high performance in a surface-mount configuration.

HSMS-2800-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-104S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 6 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

HSMS-8101-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2822-TR1

Hewlett Packard

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS88SB82,165

NXP Semiconductors

1PS88SB82,165 by NXP Semiconductors is a Schottky mixer diode with 3 elements and ultra-high frequency band. It operates b/w -65 to 125 °C and has a max reverse current of 0.2 uA. This microwave diode is suitable for applications requiring high-frequency signal mixing in electronic circuits.

BAT14-104S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 6 dB;

BAT15-123ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT62E6327HTSA1

Infineon Technologies

BAT62E6327HTSA1 by Infineon Technologies is a Schottky rectifier diode with 2 elements in anti-parallel connection. It operates in the C band frequency range up to 6 GHz, with a max power dissipation of 0.1 W. This small outline package diode has a low barrier Schottky element material and is suitable for microwave mixer and detector applications.

HSMS-2852-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA481113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

DMF2865-000

Skyworks Solutions

Skyworks Solutions' DMF2865-000 is a Schottky mixer diode with 4 elements, operating in S Band (2-4 GHz). It features low barrier Schottky technology, 0.5 pF diode capacitance, and can withstand up to 175°C. Ideal for microwave applications requiring high frequency mixing and detection.