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JANTX2N6796

Manufacturer

Semicoa
Manufacturer's Part Number

JANTX2N6796
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
Datasheet

Datasheet

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JANTX2N6796 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	75 mJ
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	8 A
JEDEC-95 Code:	TO-205AF
Maximum Pulsed Drain Current (IDM):	32 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	MIL-19500
Maximum Drain-Source On Resistance:	.195 ohm

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