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K4T1G164QQ-HCE6

Manufacturer

Samsung
Manufacturer's Part Number

K4T1G164QQ-HCE6
Description

DDR2 DRAM; No. of Terminals: 84; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;
Datasheet

Datasheet

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K4T1G164QQ-HCE6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.015 Amp
Organization:	64MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	245 mA
No. of Terminals:	84
Maximum Clock Frequency (fCLK):	333 MHz
No. of Words:	67108864 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B84
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Package Code:	FBGA
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	1073741824 bit
Sequential Burst Length:	4,8
Memory IC Type:	DDR2 DRAM
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA84,9X15,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Maximum Access Time:	.45 ns
No. of Words Code:	64M
Nominal Supply Voltage / Vsup (V):	1.8
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Power Supplies (V):	1.8

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