Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AS4C16M16SA-6TCN

Manufacturer

Alliance Memory
Manufacturer's Part Number

AS4C16M16SA-6TCN
Description

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

MBRS3200T3G

Onsemi

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

Details

BAV99

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

Details

LL4148GS08

Temic Semiconductors

LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.

Details

BAV99

Won-top Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

Details

MMBT2907ALT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

Details

1N4148

Sinyork

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

Details

ULN2803ADWRG4

Texas Instruments

ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.

Details

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

Details

0462-201-16141

TE Connectivity

TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.

Details

M39029/56-351

Itt Cannon

CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;

Details

M39029/56351

Souriau-sunbank Connection Technologies

Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.

Details

BSS138DW-7-F

Diodes Incorporated

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.

Details

BAV99-7-F

Diodes Incorporated

Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

Details

43025-0400

Molex

The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

LAN8720A-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

PIC18F4550-I/ML

Microchip Technology

The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.

Details

AS4C16M16SA-6TCN Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.025 Amp
Organization:	16MX16
Maximum Time At Peak Reflow Temperature (s):	40
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	YES
Maximum Supply Current:	60 mA
Terminal Finish:	TIN
No. of Terminals:	54
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	16777216 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G54
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	TSOP2
Width:	10.16 mm
Moisture Sensitivity Level (MSL):	3
Other Names:	1450-1252
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	268435456 bit
Self Refresh:	YES
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Package Equivalence Code:	TSOP54,.46,32
Refresh Cycles:	8192
Interleaved Burst Length:	1,2,4,8
Length:	22.22 mm
Maximum Access Time:	5 ns
No. of Words Code:	16M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V

Category Top Products

MT53E1G32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM;

S70KS1282GABHB033

Infineon Technologies

Infineon's S70KS1282GABHB033 is a 16MX8 DRAM with 1.8V supply, operating at up to 200MHz clock frequency. Suitable for automotive applications (AEC-Q100), it features synchronous operation, self-refresh capability, and a compact grid array package style.

MT47H64M16HR-25EIT:G

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:G is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and supports multi-bank page burst access mode. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

IS42S32800J-7TLI

Integrated Silicon Solution

IS42S32800J-7TLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MT48LC16M16A2P-7E:GTR

Micron Technology

MT48LC16M16A2P-7E:GTR by Micron Technology is a 16MX16 SDRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. Ideal for commercial applications requiring synchronous DRAM technology in a small outline package with dual terminal position.

W971GG6NB25I

Winbond Electronics

Winbond Electronics' W971GG6NB25I is a 64MX16 DDR2 DRAM with 67108864 words. It operates synchronously at up to 125 MHz, featuring a common I/O type and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.

MT40A512M16JY-083EAAT:BTR

Micron Technology

MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.

K4T1G164QG-BCE7

Samsung

Samsung's K4T1G164QG-BCE7 DDR2 DRAM features 64MX16 organization, operates at 400 MHz clock frequency, and has a memory density of 1073741824 bit. Ideal for applications requiring high-speed data processing and storage in devices with limited space.

IS42S16800F-7BLI-TR

Integrated Silicon Solution

IS42S16800F-7BLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for industrial applications requiring fast access time and low standby current consumption.

MT40A1G8WE-083EAAT:BTR

Micron Technology

MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).

MT42L32M32D1HE-18AAT:D

Micron Technology

Micron Technology's MT42L32M32D1HE-18AAT:D is a LPDDR2 DRAM with 32MX32 organization, operating at 533 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics or industrial devices.

MT53E256M32D2DS-053AUT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-053AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

S70KS1282GABHV020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Minimum Operating Temperature: -40 Cel;

MT47H64M16HR-25EIT:H

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:H is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MT48LC16M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.

AS4C32M16D2A-25BCN

Alliance Memory

Alliance Memory's AS4C32M16D2A-25BCN is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers fast access time of 0.4ns and features self-refresh mode. Ideal for applications requiring high-speed data processing in compact devices.

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.

EDB8132B4PB-8D-F-D

Micron Technology

Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.

M378B5773DH0-CH9

Samsung

Samsung M378B5773DH0-CH9 DDR DRAM offers 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed data processing and large memory capacity in microelectronic assemblies.