Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

KM44C256AP-8

Manufacturer

Samsung
Manufacturer's Part Number

KM44C256AP-8
Description

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: DIP; Refresh Cycles: 512; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

LL4148-GS08

Telefunken Microelectronics

RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;

Details

SS14

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

Details

SS14

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

C1005X7R1E103K050BB

TDK

The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.

Details

FDLL4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

New Jersey Semiconductor Products

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99-7-F

Diodes Incorporated

Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

Details

M39029/56-351

Amphenol

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;

Details

1N4148WS

Vishay Intertechnology

Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.

Details

BAV99

MICRODIODE ELECTRONICS SHENZHEN CO LTD

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

Details

M24308/2-1F

TE Connectivity

TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.

Details

2N7002

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

Details

LL4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

OPA2277UA

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

Details

KM44C256AP-8 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.001 Amp
Organization:	256KX4
Output Characteristics:	3-STATE
Maximum Seated Height:	4.19 mm
Access Mode:	FAST PAGE
Minimum Supply Voltage (Vsup):	4.5 V
Sub-Category:	DRAMs
Surface Mount:	NO
Maximum Supply Current:	75 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	20
No. of Words:	262144 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T20
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Width:	7.62 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	1048576 bit
Memory IC Type:	FAST PAGE DRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	4
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIP20,.3
Refresh Cycles:	512
Length:	24.56 mm
Maximum Access Time:	80 ns
No. of Words Code:	256K
Nominal Supply Voltage / Vsup (V):	5
Additional Features:	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.5 V
Power Supplies (V):	5

Category Top Products

MT48LC8M16A2P-6A:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

IS43TR16256A-125KBLI

Integrated Silicon Solution

IS43TR16256A-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and operates in industrial temperature grade range from -40 to 85 °C. Ideal for applications requiring high memory density and fast access times.

MT46H64M16LFBF-5IT:BTR

Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:BTR is a DDR1 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.

MT48LC8M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:GTR is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This DRAM is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.

MT48LC16M16A2P-7E

Micron Technology

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.

M378T5663RZ3-CF7

Samsung

Samsung M378T5663RZ3-CF7 DDR DRAM with 256MX8 organization, 400 MHz clock frequency, and 1.8V supply voltage is ideal for high-speed computing applications. Featuring synchronous operation and self-refresh capability, it offers efficient performance in dual bank page burst access mode.

D2164A-15

Intel

Intel's D2164A-15 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 150ns. Ideal for commercial applications requiring high-speed memory solutions.

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.

NT5TU64M16HG-ACH

Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.

K4S641632H-UC75

Samsung

Samsung's K4S641632H-UC75 is a 3.3V DRAM with 4MX16 organization, 133 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

K4S561632E-TC75T00

Samsung

Samsung's K4S561632E-TC75T00 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

MT41K128M8DA-107IT:J

Micron Technology

MT41K128M8DA-107IT:J by Micron Technology is a DDR3L DRAM with 128MX8 organization and 1.35V nominal voltage. It operates at a max clock frequency of 933 MHz and is commonly used in applications requiring high-speed memory access, such as servers and high-performance computing systems.

IS42S16160J-7TLI-TR

Integrated Silicon Solution

IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;

MT53E128M32D2DS-046WT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.

MT40A512M8SA-062EAAT:F

Micron Technology

Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.