MT42L32M32D1HE-18AAT:D by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,405	$4.028	$5,659.340

MT42L32M32D1HE-18AAT:D

Manufacturer

Micron Technology
Manufacturer's Part Number

MT42L32M32D1HE-18AAT:D
Description

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST; Memory Width: 32;
Datasheet

Datasheet

1405 In Stock

Popular Products

NUP2105LT1G

Onsemi

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

Details

SMBJ18CA

Sensitron Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

Details

1N4148

ROHM

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

Details

2N2222A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

Details

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

Details

MBR1560CT

General Instrument

MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.

Details

CRGCQ0805F10K

TE Connectivity

TE Connectivity's CRGCQ0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance.

Details

LM358AN

NXP Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148

Grande Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM358D-T

NXP Semiconductors

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

Details

BAV99

ROHM

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Mde Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM7805CT

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N7002-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

Details

LM358MX

Texas Instruments

LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.

Details

MT42L32M32D1HE-18AAT:D Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.005 Amp
Organization:	32MX32
Output Characteristics:	3-STATE
Maximum Seated Height:	1 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.14 V
Surface Mount:	YES
Maximum Supply Current:	200 mA
No. of Terminals:	134
Maximum Clock Frequency (fCLK):	533 MHz
No. of Words:	33554432 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B134
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	VFBGA
Width:	10 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	1073741824 bit
Self Refresh:	YES
Sequential Burst Length:	4,8,16
Memory IC Type:	LPDDR2 DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	32
No. of Functions:	1
Package Equivalence Code:	BGA134,10X17,25
Interleaved Burst Length:	4,8,16
Length:	11.5 mm
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	1.2
Terminal Pitch:	.65 mm
Maximum Supply Voltage (Vsup):	1.3 V

Category Top Products

MT41K256M16TW-107:P/TR

Micron Technology

Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

SQR-SD3M-8G1K8SNLB

Advantech

Advantech's SQR-SD3M-8G1K8SNLB DDR3L DRAM MODULE features 8GX8 organization, 1.35V supply voltage, and 85°C max operating temp. Ideal for applications requiring high memory density and fast synchronous operation in microelectronic assemblies.

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.

MT53D512M32D2DS-053AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053AUT:D is a 512MX32 LPDDR4 DRAM with 1.1V, -40 to 125 °C temp range, and 1866 MHz clock freq. Ideal for automotive applications due to its robust design and high memory density of 17.18 Gb.

K4S641632H-TC60

Samsung

Samsung's K4S641632H-TC60 is a 4MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for commercial applications, it offers synchronous operation, self-refresh capability, and a small outline package design.

MT41J128M16JT-125:K

Alliance Memory

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MT40A256M16LY-062E:FTR

Micron Technology

MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

M378T5663RZ3-CF7

Samsung

Samsung M378T5663RZ3-CF7 DDR DRAM with 256MX8 organization, 400 MHz clock frequency, and 1.8V supply voltage is ideal for high-speed computing applications. Featuring synchronous operation and self-refresh capability, it offers efficient performance in dual bank page burst access mode.

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.

S27KS0642GABHV020

Infineon Technologies

S27KS0642GABHV020 by Infineon Technologies is a 8MX8 DRAM with synchronous operation, self-refresh capability, and 200 MHz clock frequency. It is ideal for applications requiring high-speed memory access in compact devices due to its very thin profile package style and common I/O type.

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.

M374S1723FTS-C7A

Samsung

Samsung M374S1723FTS-C7A is a 16MX72 Synchronous DRAM Module with 133 MHz fCLK. It operates at 3.3V, has 72 memory width, and supports FOUR BANK PAGE BURST access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

MT41J128M16JT-125G:K

Micron Technology

Micron Technology's MT41J128M16JT-125G:K is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in compact devices.

AS4C16M16SA-7TCNTR

Alliance Memory

AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.

KVR16S11/8

Kingston Technology Company

Kingston KVR16S11/8 is a DDR3 DRAM module with 1Gx64 organization, operating at 800MHz. It has a memory density of 68719476736 bits and operates at a voltage range of 1.425V to 1.575V. Ideal for applications requiring synchronous operation and common I/O type in microelectronic assemblies.

S70KS1282GABHI020

Infineon Technologies

Infineon's S70KS1282GABHI020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 85°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its very thin profile grid array package style.

TC511000BFTL-70

Toshiba

Toshiba's TC511000BFTL-70 is a 1MX1 DRAM with 1048576-bit memory density. It operates at 5V, has FAST PAGE access mode with 70ns max access time. Ideal for applications requiring high-speed data storage in compact devices due to its small outline, thin profile package style.

IS42S16160J-6BLI

Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.

NT5CC64M16GP-DIH

Nanya Technology

NT5CC64M16GP-DIH by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

AS4C4M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C4M16SA-6BIN is a 3.3V, 4MX16 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode, operates at -40 to 85°C, and has a memory density of 67108864 bits.