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HYB25D512160BE-6
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ManufacturerQimonda Ag
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Manufacturer's Part NumberHYB25D512160BE-6
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DescriptionDDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
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Datasheet
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DetailsHYB25D512160BE-6 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .004 Amp |
| Organization: | 32MX16 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 2.3 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| No. of Terminals: | 66 |
| Maximum Clock Frequency (fCLK): | 166 MHz |
| No. of Words: | 33554432 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE, THIN PROFILE |
| Technology: | CMOS |
| JESD-30 Code: | R-PDSO-G66 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | TSOP2 |
| Width: | 10.16 mm |
| Moisture Sensitivity Level (MSL): | 1 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 536870912 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 2,4,8 |
| Memory IC Type: | DDR1 DRAM |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | TSSOP66,.46 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 2,4,8 |
| Length: | 22.22 mm |
| Maximum Access Time: | .7 ns |
| No. of Words Code: | 32M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | AUTO/SELF REFRESH |
| Terminal Pitch: | .65 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 2.7 V |
| Power Supplies (V): | 2,5 |