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K4S561632N-LI75

Manufacturer

Samsung
Manufacturer's Part Number

K4S561632N-LI75
Description

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4S561632N-LI75 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.002 Amp
Organization:	16MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	80 mA
No. of Terminals:	54
Maximum Clock Frequency (fCLK):	133 MHz
No. of Words:	16777216 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G54
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	TSOP
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	268435456 bit
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	TSOP54,.46,32
Refresh Cycles:	8192
Interleaved Burst Length:	1,2,4,8
Maximum Access Time:	5.4 ns
No. of Words Code:	16M
Nominal Supply Voltage / Vsup (V):	3.3
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	3.3

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