MT53E256M32D2DS-053AAT:B by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
163	$15.324	$2,497.730

MT53E256M32D2DS-053AAT:B

Manufacturer

Micron Technology
Manufacturer's Part Number

MT53E256M32D2DS-053AAT:B
Description

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: .8 mm; No. of Functions: 1;
Datasheet

163 In Stock

Popular Products

SMBJ18CA

First Components International

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

ULN2803A

Rochester Electronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;

Details

CGA3E2X7R1H104K080AA

TDK

CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.

Details

FDLL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

LM107H

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

LFXTAL025159REEL

Iqd Frequency Products

LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.

Details

SMBJ18CA

World Products

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LIS2DH12TR

STMicroelectronics

LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.

Details

BAV99

Infinex

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LAN8720A-CP-TR

Microchip Technology

LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.

Details

NE555D

Philips Semiconductors

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CN

Rca Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

1N4148

Nte Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;

Details

BAV99

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Motorola

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

Details

1N4148WS

First Components International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MT53E256M32D2DS-053AAT:B Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	256MX32
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	.8 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.06 V
Surface Mount:	YES
No. of Terminals:	200
Maximum Clock Frequency (fCLK):	1866 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B200
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	VFBGA
Width:	10 mm
Other Names:	MT53E256M32D2DS-053AAT:B
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	8589934592 bit
Self Refresh:	YES
Sequential Burst Length:	16,32
Memory IC Type:	LPDDR4 DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	32
No. of Functions:	1
Package Equivalence Code:	BGA200,12X22,32/25
Interleaved Burst Length:	16,32
Length:	14.5 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.1
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.8 mm
Maximum Supply Voltage (Vsup):	1.17 V

Category Top Products

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.

M378T2863DZS-CE6

Samsung

Samsung M378T2863DZS-CE6 DDR DRAM Module features 128MX64 organization, operates at 333 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.

M378B5673EH1-CH9

Samsung

Samsung M378B5673EH1-CH9 DDR DRAM features 256MX64 organization, operates at 667 MHz with 3-STATE output. Suitable for high-performance computing applications due to its synchronous operation and self-refresh capability.

M378T6553EZS-CE6

Samsung

Samsung M378T6553EZS-CE6 DDR DRAM Module features 64MX64 organization, operates at 333 MHz with 1.8V supply voltage. Ideal for applications requiring high-speed synchronous memory in microelectronic assemblies.

IS42S16400J-5TL

Integrated Silicon Solution

IS42S16400J-5TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access and high data density in a small outline package.

MT48LC8M16A2P-7EIT

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT is a 8MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

MTA36ASF4G72PZ-2G3B1

Micron Technology

Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.

MT53D1024M32D4DT-053AAT:DTR

Micron Technology

DDR4 DRAM; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

KVR1333D3S9/4GKC

Kingston Technology Company

DDR DRAM MODULE;

K4S561632E-TC75T00

Samsung

Samsung's K4S561632E-TC75T00 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

EDD5116AGTA-5B-E

Elpida Memory

Elpida Memory's EDD5116AGTA-5B-E is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed data processing in commercial temperature environments.

MT41J128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41J128M16JT-125AAT:K is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.

MT41K512M16HA-125:ATR

Micron Technology

DDR3L DRAM; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;

NT5CC256M16EP-EK

Nanya Technology

NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.

MT48LC8M16A2TG-6A:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for applications requiring fast memory access and high data density in commercial temperature environments.

EDD5108AGTA-5B-E

Elpida Memory

Elpida Memory's EDD5108AGTA-5B-E is a 64MX8 DDR1 DRAM with 67108864 words, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast access times in commercial temperature grades.

MT40A512M16LY-062EAAT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

K4B2G1646C-HCH9

Samsung

Samsung's K4B2G1646C-HCH9 DDR3 DRAM features 128MX16 organization, 667 MHz clock frequency, and 1.5V supply voltage. Ideal for high-performance computing applications due to its fast access time and large memory density of 2147483648 bits.

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.

K4S641632H-TC60

Samsung

Samsung's K4S641632H-TC60 is a 4MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for commercial applications, it offers synchronous operation, self-refresh capability, and a small outline package design.