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MMBT918

Manufacturer

Onsemi
Manufacturer's Part Number

MMBT918
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

2773 In Stock

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FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;

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2N7002,215

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2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.

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BAV99

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RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

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SS14+

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SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.

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SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148WT

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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CRG0805F10R

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LM107H/883

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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MMBT918 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	3 pF
Peak Reflow Temperature (C):	260

Category Top Products

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HFA3127RZ by Renesas Electronics is a NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra high frequency band up to 8V and has a transition frequency of 8000 MHz. This chip carrier package features separate configuration with matte tin finish, suitable for surface mount assembly.

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The Onsemi MMPQ2369R2 is an NPN RF BJT with 4 elements, ideal for amplifier applications. It features a max operating temp of 150 °C, fT of 550 MHz, and hFE of 40. This transistor has a max VCE of 15V and IC of 0.5A, making it suitable for high-frequency circuits in small outline packages.

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BF224ZL1 by Onsemi is a NPN BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for RF applications in the very high frequency band due to its SILICON transistor element and cylindrical package style. Operates at up to 150 °C with through-hole terminals for easy installation.

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MPS5179G by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it ideal for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals, suitable for high-frequency circuit designs.

MPSH10

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;

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MPS3563ZL1 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical and is ideal for RF signal amplification.

START499TR

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MMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max operating temp of 150°C. It has a transition frequency of 650 MHz and a collector-emitter voltage of 25V, making it ideal for ultra-high frequency amplifier applications in small outline packages.

MMBTH10LT3

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MMBTH10LT3 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for UHF applications, it comes in a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.

2N2222

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MPS3640

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NXP Semiconductors' MPS3640 is a PNP BJT transistor with 3 terminals, ideal for switching applications in the UHF band. Featuring a max. collector-emitter voltage of 12V, fT of 500MHz, and IC of 0.08A, it offers high performance in a cylindrical package suitable for through-hole mounting.

BFR93AGELB-GS08

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

BFU520YX

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The NXP Semiconductors BFU520YX is an RF NPN BJT transistor with a max fT of 10 GHz. It has a max VCE of 12V and Ptot of 0.45W, suitable for L Band applications like amplifiers. The package is a small outline with Gull Wing terminals, operating b/w -40 to 150°C.

2N4401

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

MSC2295-BT1

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The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.

Bulk

MMBT918

2773 In Stock

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MMBT918 Technical Details

Category Top Products

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