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BFG67/X,215

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFG67/X,215
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

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BFG67/X,215 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	8000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	.3 W
Moisture Sensitivity Level (MSL):	1
Other Names:	954-BFG67/X215 BFG67/X T/R-ND NXPNXPBFG67/X,215 BFG67/X T/R 568-11111-1 2156-BFG67/X215-NXTR 934007250215 568-11111-6 568-11111-2 BFG67/X,215-ND
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	10 V
Additional Features:	HIGH RELIABILITY
Reference Standard:	CECC
Peak Reflow Temperature (C):	260

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