BFG67/X,215 by NXP Semiconductors

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BFG67/X,215

  • Manufacturer
    NXP Semiconductors
  • Manufacturer's Part Number
    BFG67/X,215
  • Description
    NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
  • Datasheet

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BFG67/X,215 Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: .3 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 10 V
Additional Features: HIGH RELIABILITY
Reference Standard: CECC
Peak Reflow Temperature (C): 260

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